MBR12040CT

$48.80

Description：DIODE MOD SCHOTT 40V 120A 2TOWER
Series：-

SKU:d8091d86f58d Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR12040CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 40V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12040CT

Description：DIODE MOD SCHOTT 40V 120A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：40 V
Current - Average Rectified (Io) (per Diode)：120A (DC)
Voltage - Forward (Vf) (Max) @ If：650 mV @ 120 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：3 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR12040CT

MBR12040CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR12040CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides an average forward current of 120 A per package and supports repetitive peak reverse voltages up to 40 V. The device exhibits a maximum forward voltage of 0.70 V at Tj = 100 °C and offers high surge capability with a peak forward surge current of 800 A. Thermal resistance from junction to case is 0.80 °C/W per leg, ensuring efficient heat dissipation.

Diode Arrays Feature Summary

High surge capability for robust performance under transient conditions
Electrically isolated base plate within the Twin Tower package
Not sensitive to electrostatic discharge (ESD)
Low forward voltage drop characteristics

Diode Arrays Applications

DC-DC converters
Free-wheeling rectification in motor drives
Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values. Confirm RoHS compliance status through manufacturer datasheets prior to integration into final assemblies.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling and low forward voltage drops. Evaluate thermal constraints based on the 0.80 °C/W junction-to-case resistance. Consider the 800 A surge rating for circuits experiencing high inrush currents or short-duration overloads during operation.

Diode Arrays Part Context

This module belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings ranging from 20 V to 60 V, all sharing similar current capabilities and package styles designed for high-efficiency power conversion applications.