Diode Arrays MBR12060CT product image

MBR12060CT

$48.80
  • Description:DIODE MOD SCHOTT 60V 120A 2TOWER
  • Series:-

SKU:19847912e90b Category: Brand:

  
  • Quantity
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MBR12060CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 60V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12060CT

  • Description:DIODE MOD SCHOTT 60V 120A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):120A (DC)
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 60 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR12060CT

MBR12060CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR12060CT is a silicon power Schottky diode module featuring a twin tower package configuration. It provides a repetitive peak reverse voltage of 60 V and an average forward current rating of 120 A per package. The device exhibits a maximum forward voltage of 0.75 V at 60 A and supports a peak forward surge current of 800 A. Thermal resistance from junction to case is 0.80 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability with 800 A non-repetitive peak forward current support
  • Electrically isolated base plate for mounting flexibility
  • Not ESD sensitive during handling and assembly

Diode Arrays Applications

  • DC-DC converter circuits
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation, as variants may feature reversed leads or distinct terminal configurations. Confirm thermal interface requirements match the specified junction-to-case resistance. Ensure sourcing channels provide valid traceability for industrial-grade components.

Diode Arrays Selection Notes

Select this component for applications requiring robust surge handling and low forward voltage drop at high currents. The twin tower package facilitates efficient heat dissipation through the isolated base plate. Evaluate thermal management strategies to maintain junction temperature within the specified operational limits under continuous load conditions.

Diode Arrays Part Context

This module belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series encompasses ratings from 45 V to 100 V reverse voltage, maintaining consistent 120 A current capacity across variants. The twin tower form factor standardizes mounting dimensions for parallel processing in power electronics designs.

Diode Arrays Replacement Considerations

Cross-reference pinout orientation carefully when substituting, as 'R' suffix versions possess reversed leads. Verify that alternative modules meet the 0.80 °C/W thermal resistance requirement to ensure equivalent cooling performance.

MBR12060CTMBR12060CT
$48.80
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