Diode Arrays MBR20080CTR product image

MBR20080CTR

$63.89
  • Description:DIODE MOD SCHOTT 80V 200A 2TOWER
  • Series:-

SKU:421934506e59 Category: Brand:

  
  • Quantity
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MBR20080CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20080CTR

  • Description:DIODE MOD SCHOTT 80V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):200A (DC)
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR20080CTR

MBR20080CTR

Diode Arrays Overview

The MBR20080CTR is a silicon power Schottky diode module from the GeneSiC Semiconductor MBR200 series. It features a Twin Tower package with screw mount installation. The device has a repetitive peak reverse voltage of 80 V and an average forward current rating of 200 A per package. Maximum forward voltage is 0.84 V at Tj = 100 °C. Thermal resistance junction-case is 0.45 °C/W per leg. Operating temperature range is -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability
  • Twin Tower package design
  • Not ESD sensitive

Diode Arrays Applications

  • Power conversion systems
  • DC-DC converters
  • Inverter circuits

Diode Arrays Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm electrical ratings and pinout configuration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance. Confirm compatibility with existing mounting hardware for the Twin Tower package style before procurement.

Diode Arrays Selection Notes

Select this component based on the required 80 V reverse voltage and 200 A current handling capabilities. Consider the Twin Tower package for screw-mount applications requiring high surge tolerance. Evaluate thermal performance within the -55 °C to +150 °C operating range to ensure reliability in the target environment.

Diode Arrays Part Context

This module belongs to the MBR200 series, which includes variants ranging from 45 V to 100 V reverse voltage. The series utilizes silicon technology and offers consistent 200 A average forward current ratings across different voltage options. The CTR suffix indicates reversed leads compared to standard CT versions.

Diode Arrays Replacement Considerations

MBR20080CT

Diode Arrays FAQ

What is the maximum forward surge current?

The peak forward surge current is 1500 A per leg for an 8.3 ms half-sine wave pulse.

How does the CTR suffix affect the component?

Devices with the 'R' suffix have reversed leads compared to standard configurations.

Is the module sensitive to electrostatic discharge?

No, the module is not ESD sensitive.

MBR20080CTRMBR20080CTR
$63.89
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