Diode Arrays MBR20H100CT product image

MBR20H100CT

$0.97
  • Description:DIODE ARR SCHOTT 100V 10A TO-220
  • Series:SWITCHMODE™

SKU:7b978157b1cd Category: Brand:

  
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MBR20H100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARR SCHOTT 100V 10A TO-220. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20H100CT

  • Description:DIODE ARR SCHOTT 100V 10A TO-220
  • Series:SWITCHMODE™
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:770 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:4.5 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR20H100CT

MBR20H100CT

Diode Arrays Overview

The MBR20H100CT is a Switch-mode Power Rectifier featuring dual common cathode Schottky barrier diodes. It provides a peak repetitive reverse voltage of 100 V and an average rectified forward current of 20 A total, with 10 A per diode leg at a case temperature of 162°C. The device supports a nonrepetitive peak surge current of 250 A and operates up to a junction temperature of +175°C. Electrical characteristics include a maximum instantaneous forward voltage of 0.88 V at 20 A and 25°C, and a maximum reverse current of 6.0 mA at rated DC voltage and 125°C.

Diode Arrays Feature Summary

  • Guard-ring structure designed for stress protection
  • Controlled avalanche capability for energy handling
  • Low forward voltage drop for high efficiency
  • High thermal stability with 175°C operating junction temperature

Diode Arrays Applications

  • Power Supply Output Rectification
  • Power Management Systems
  • Instrumentation

Diode Arrays Procurement Notes

Verify the specific package variant required, as the base model number corresponds to multiple distinct packages including TO-220, TO-220 Fullpak, and D2PAK. Confirm that the ordered part includes the 'G' suffix to ensure Pb-Free and RoHS compliance status. Check the ordering information section for shipping quantities, such as 50 units per rail or 800 units per tape and reel, to match manufacturing needs.

Diode Arrays Selection Notes

Select this component for applications requiring low power loss and high efficiency in switch-mode environments. Ensure the design accommodates the 175°C maximum junction temperature rating. Verify that the circuit can handle the 250 A nonrepetitive peak surge current during startup or fault conditions. Consider the thermal resistance values provided for the specific package style when designing heat dissipation strategies.

Diode Arrays Part Context

This device belongs to the onsemi Switch-mode Power Rectifier family, utilizing Schottky barrier technology to minimize switching losses. The product line includes variants with different packaging options to suit various mounting requirements. The NRVBB prefix indicates automotive qualification and unique site control changes, while standard suffixes denote general industrial availability.

Diode Arrays Replacement Considerations

MBR20H100CTG (TO-220)

Diode Arrays FAQ

What is the controlled avalanche energy rating?

The device has a controlled avalanche energy rating of 200 mJ.

How is the forward current distributed between the diodes?

The total average rectified forward current is 20 A, distributed as 10 A per diode leg.

Is the device suitable for high-temperature operation?

Yes, the device supports an operating junction temperature range up to +175°C.

MBR20H100CTMBR20H100CT
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