MBR20H100CTG

Diode Arrays Overview

The MBR20H100CTG is a Switch-mode Power Rectifier manufactured by onsemi, featuring a dual common cathode configuration in a TO-220 package. It provides a peak repetitive reverse voltage of 100 V and an average rectified forward current of 10 A per diode leg, totaling 20 A. The device exhibits low forward voltage characteristics, specifically 0.64 V at 125°C, ensuring high efficiency. It supports a nonrepetitive peak surge current of 250 A and operates at junction temperatures up to 175°C.

Diode Arrays Feature Summary

• Low forward voltage for reduced power loss and high efficiency
• High surge current capacity with controlled avalanche energy rating
• Guard-ring structure designed for stress protection
• Lead-free packaging compliant with RoHS standards

Diode Arrays Applications

• Power supply output rectification
• Power management systems
• Instrumentation circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the package style, as the MBR20H100CTG designation corresponds to the TO-220 variant. Confirm RoHS compliance status and check for any discontinuation notices or alternative recommendations from the manufacturer before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky barrier rectifier is required for switch-mode applications. Ensure the thermal design accommodates the specified maximum junction temperature and that the circuit voltage does not exceed the 100 V repetitive reverse voltage rating under all operating conditions.

Diode Arrays Part Context

This part belongs to the MBR series of Schottky Barrier Rectifiers from onsemi. It shares electrical specifications with variants such as MBRB20H100CTG (D2PAK) and MBRF20H100CTG (TO-220FP), differing primarily in physical package dimensions and mounting styles while maintaining identical performance parameters.

Diode Arrays Replacement Considerations

Direct replacements include MBRB20H100CTG and MBRF20H100CTG, which share the same electrical ratings but utilize different packages. Verify pinout compatibility and thermal resistance requirements when substituting these variants.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175°C.

Does the device support controlled avalanche operation?

Yes, the device features a controlled avalanche capability with a rated energy of 200 mJ.

What is the typical forward voltage at elevated temperatures?

The forward voltage is typically 0.64 V at a case temperature of 125°C with a forward current of 10 A.