MBR20H100CTGHE3/45

Diode Arrays Overview

The MBR20H100CTGHE3/45 is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology for improved high-temperature performance and features a guardring for overvoltage protection. The device is housed in a TO-220AB package with matte tin-plated leads. Key electrical parameters include a maximum repetitive peak reverse voltage of 100 V, a maximum average forward rectified current of 10 A per diode at a case temperature of 155 °C, and a peak forward surge current of 150 A. The typical instantaneous forward voltage is 0.70 V at 20 A, while the maximum reverse current is 4.5 mA at 125 °C. The operating junction and storage temperature range spans from -65 to +175 °C.

Diode Arrays Feature Summary

• High barrier technology designed for enhanced high-temperature operation
• Guardring structure provides overvoltage protection
• Low forward voltage drop contributes to reduced power losses and high efficiency
• Matte tin plated leads are solderable per J-STD-002 and JESD22-B102 standards

Diode Arrays Applications

• High frequency rectification in switching mode power supplies
• Freewheeling diodes in DC-to-DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix configuration when ordering, as the HE3 designation indicates a high reliability grade that is AEC-Q101 qualified and meets stricter whisker test requirements compared to standard consumer grades. Confirm the tube packaging quantity matches the required delivery mode. Ensure the component selection aligns with the thermal management capabilities defined for the TO-220AB case style.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency operation and low leakage current characteristics. The dual common-cathode configuration allows for efficient use in bridge or center-tapped topologies. Consider the thermal resistance of 2.0 °C/W per diode when designing heat dissipation strategies. Validate the forward voltage derating curves against the expected operating junction temperatures to ensure compliance with efficiency targets.

Diode Arrays Part Context

This part belongs to the MBR20HxxCTG series of dual common-cathode Schottky rectifiers. The 'HE3' suffix denotes a high-reliability variant that is automotive qualified under AEC-Q101 standards. The 'E3' suffix indicates lead-free construction compliant with RoHS directives. The '45' suffix specifies the tube packaging format containing fifty units per tube.

Diode Arrays Replacement Considerations

MBR20H90CTGHE3/45

Diode Arrays FAQ

What is the difference between the E3 and HE3 suffixes?

The E3 suffix indicates a consumer-grade product that meets JESD 201 class 1A whisker test requirements, whereas the HE3 suffix denotes a high-reliability grade that is AEC-Q101 qualified and meets the more stringent JESD 201 class 2 whisker test.

How does the forward voltage change with temperature?

The typical instantaneous forward voltage decreases as the junction temperature increases. For example, at 20 A, the forward voltage drops from a maximum of 0.93 V at 25 °C to 0.80 V at 125 °C.

Is the component suitable for high-frequency applications?

Yes, the datasheet explicitly lists high-frequency operation as a feature, making it suitable for use in switching mode power supplies and DC-to-DC converters.