MBR20H35CTHE3/45

Diode Arrays Overview

The MBR20H35CTHE3/45 is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology to deliver low forward voltage drop and low leakage current, ensuring high efficiency and reduced power losses. The device features a guardring for overvoltage protection and supports a maximum repetitive peak reverse voltage of 35 V with an average forward rectified current of 10 A per diode. It operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

• High barrier technology provides improved high-temperature performance and lower power losses.
• Guardring structure ensures robust overvoltage protection capabilities.
• Low forward voltage drop and low leakage current contribute to high system efficiency.
• High forward surge capability supports demanding transient load conditions.

Diode Arrays Applications

• Low voltage, high frequency rectification in switching mode power supplies
• Freewheeling diodes in DC-to-DC converter circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix configuration against official documentation before procurement. Confirm that the HE3 designation aligns with required reliability grades and whisker test standards. Ensure the TO-220AB package matches the intended thermal management and mounting requirements for the target application design.

Diode Arrays Selection Notes

Select this component when low forward voltage drop and high efficiency are critical for power loss reduction. Consider the 35 V reverse voltage rating and 10 A per diode current capacity relative to circuit demands. Evaluate the thermal resistance characteristics and operating temperature limits to ensure compatibility with the system's heat dissipation strategy.

Diode Arrays Part Context

This part belongs to the MBR(F,B)20HxxCT series from Vishay General Semiconductor. The series encompasses various voltage ratings including 35 V, 45 V, 50 V, and 60 V options. All variants share similar structural features such as dual common-cathode configuration and high barrier technology for consistent performance across the product line.

Diode Arrays Replacement Considerations

Vishay MBR20H45CTHE3/45

Diode Arrays FAQ

What is the function of the guardring in this component?

The guardring provides overvoltage protection to enhance the reliability of the device under transient stress conditions.

How does the high barrier technology benefit the circuit?

It enables improved high-temperature performance while maintaining low forward voltage drop and low leakage current for higher efficiency.

What is the maximum non-repetitive peak forward surge current?

The device supports a peak forward surge current of 150 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.