Diode Arrays MBR25100CT product image

MBR25100CT

  • Description:DIODE ARR SCHOT 100V 25A TO220AB
  • Series:-

SKU:69e41b347ef4 Category: Brand:

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MBR25100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOT 100V 25A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR25100CT

  • Description:DIODE ARR SCHOT 100V 25A TO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):25A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 25 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 100 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR25100CT

MBR25100CT

Diode Arrays Overview

The MBR25100CT is a common cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features two silicon elements in a single-phase configuration, rated for a continuous forward current of 12.5 A and a maximum repetitive reverse voltage (VRRM) of 100 V. The device utilizes a TO-220AB flange-mount package with an isolated cathode connection. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A and a junction temperature range from -65 °C to 175 °C.

Diode Arrays Feature Summary

  • Utilizes metal-silicon junction technology for majority carrier conduction, ensuring low power loss and high efficiency.
  • Incorporates guardring design for enhanced overvoltage protection capabilities.
  • Engineered for high current capability with low forward voltage drop characteristics.
  • Guaranteed high temperature soldering performance suitable for surface mounted applications.

Diode Arrays Applications

  • Low voltage, high frequency inverters
  • Free wheeling diode circuits
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Taiwan Semiconductor documentation to confirm exact pinout, lead finish, and RoHS compliance status. Ensure the procurement channel provides valid manufacturer traceability. Cross-reference the component marking with the datasheet to prevent counterfeit substitution. Confirm thermal interface requirements for the TO-220AB package before finalizing supply agreements.

Diode Arrays Selection Notes

Select this component for designs requiring robust high-frequency rectification with minimal forward voltage drop. The 100 V rating suits low-voltage DC-DC converters and power supplies. Verify that the 12.5 A continuous current rating aligns with the thermal management strategy for the TO-220AB package. Consider the 175 °C maximum junction temperature for high-ambient environments.

Diode Arrays Part Context

This part belongs to the MBR series of Schottky barrier rectifiers from Taiwan Semiconductor. It shares the common cathode configuration with other variants in the lineup but differs in voltage and current ratings. The TO-220AB package distinguishes it from surface-mount options like the MBRS series, offering higher thermal dissipation capacity through its flange mount design.

Diode Arrays Replacement Considerations

Cross-reference with MBR25100CTHC0 for identical specifications. Verify compatibility with MBR25100CT_10001 from Panjit, noting potential differences in operating temperature ranges and package tolerances despite similar electrical ratings.

MBR25100CTMBR25100CT

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