MBR2545CT

Diode Arrays Overview

The MBR2545CT is a dual common cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features a silicon metal junction with majority carrier conduction in a TO-220 through-hole package. Key electrical parameters include a maximum repetitive peak reverse voltage of 45 V and a continuous forward current rating of 25 A. The device supports a peak non-repetitive forward surge current of 200 A. Maximum forward voltage is specified at 820 mV, with a maximum reverse current of 1 μA. The component operates within a temperature range of -65 °C to +150 °C junction temperature.

Diode Arrays Feature Summary

• Utilizes metal silicon junction technology for majority carrier conduction to ensure low power loss and high efficiency.
• Features lead-free pure tin-plated terminals that are solderable according to MIL-STD-750 standards.
• Constructed with a molded plastic case providing an isolated flange mount configuration.

Diode Arrays Applications

• Free wheeling diode applications in power conversion circuits
• High frequency rectification requiring low power loss
• Efficiency-critical DC-DC converter designs

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact terminal plating and packaging specifications. Confirm RoHS compliance status and military-grade qualification requirements directly with the supplier. Ensure the procurement channel provides valid traceability for the active product lifecycle status.

Diode Arrays Selection Notes

Select this component for circuits requiring a 45 V blocking capability with a 25 A continuous current handling capacity. The TO-220 package facilitates direct heatsinking for thermal management. Verify that the application environment remains within the specified -65 °C to +150 °C operating temperature range.

Diode Arrays Part Context

This device belongs to the MBR series of Schottky barrier rectifiers from Taiwan Semiconductor. It is designed as a replacement for standard fast recovery rectifiers in high-frequency applications. The dual common cathode configuration allows for use in full-wave rectifier circuits without requiring external phase shifting.

Diode Arrays Replacement Considerations

MBR2535CTG

Diode Arrays FAQ

What is the internal configuration of the MBR2545CT?

The device contains two independent Schottky diodes connected in a common cathode configuration within a single package.

Is the MBR2545CT suitable for high-frequency operation?

Yes, the Schottky barrier technology enables low power loss and high efficiency, making it suitable for high-frequency rectification.