Diode Arrays MBR2545CT801HE3/45 product image

MBR2545CT801HE3/45

  • Description:DIODE ARR SCHOT 45V 12.5A TO2203
  • Series:-

SKU:91614d8e9a52 Category: Brand:

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MBR2545CT801HE3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 45V 12.5A TO2203. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2545CT801HE3/45

  • Description:DIODE ARR SCHOT 45V 12.5A TO2203
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):12.5A
  • Voltage - Forward (Vf) (Max) @ If:820 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 µA @ 45 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR2545CT801HE3/45

MBR2545CT801HE3/45

Diode Arrays Overview

The MBR2545CT801HE3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor. It features a TO-220AB package with a maximum repetitive peak reverse voltage of 45 V and a total average forward rectified current of 25 A (12.5 A per diode). The device exhibits a maximum instantaneous forward voltage of 0.82 V at 30 A and 25 °C, alongside a peak forward surge current capability of 150 A per diode. Operating junction temperature ranges from -65 °C to +150 °C.

Diode Arrays Feature Summary

  • Guardring structure provides enhanced overvoltage protection capabilities
  • Low forward voltage drop design ensures high efficiency and reduced power losses
  • High frequency operation suitability for switching applications
  • Robust construction supports high forward surge current requirements

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converter circuits
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm availability as distribution channels may vary. Ensure thermal management aligns with datasheet derating curves for optimal performance.

Diode Arrays Selection Notes

Select this component for designs requiring low forward voltage drop and high surge current handling in a through-hole configuration. Evaluate thermal resistance characteristics relative to the application's case temperature constraints. Verify that the 45 V reverse voltage rating exceeds the circuit's peak operating voltage.

Diode Arrays Part Context

This part belongs to the MBR25xxCT series of dual common cathode Schottky rectifiers. It utilizes silicon technology within a TO-220AB plastic package. The product line emphasizes low power loss and high efficiency for modern power conversion systems.

Diode Arrays Replacement Considerations

MBR2545CT-E3/45

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage is 45 V.

How is the internal configuration arranged?

The device contains two independent diodes configured in a common cathode arrangement.

What is the peak forward surge current rating?

The peak forward surge current is 150 A per diode under an 8.3 ms single half sine-wave condition.

MBR2545CT801HE3/45MBR2545CT801HE3/45

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