MBR2550CT

Diode Arrays Overview

The onsemi MBR2550CT is a silicon Schottky barrier rectifier featuring a dual common cathode configuration housed in a TO-220-3 through-hole package. It supports a continuous forward current of 25 A and a repetitive peak reverse voltage of 50 V. The device exhibits a maximum forward voltage drop of 820 mV and handles a non-repetitive peak forward surge current of 200 A. Reverse leakage current is limited to 200 uA, with an operating temperature range spanning from -65 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes metal-silicon junction technology for majority carrier conduction, ensuring low power loss and high efficiency.
• Features a guardring structure designed to provide overvoltage protection and enhance device stability.
• Constructed with lead-free pure tin-plated terminals that are solderable according to MIL-STD-750 standards.

Diode Arrays Applications

• Low voltage, high frequency inverters
• Free wheeling applications
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and terminal plating specifications. Ensure the procurement source provides valid RoHS compliance documentation. Cross-reference the part number with the latest product change notices to confirm manufacturing status and material composition updates before finalizing orders.

Diode Arrays Selection Notes

Select this component for designs requiring high current handling capabilities at low voltage drops. The TO-220-3 package facilitates effective thermal management for high-power dissipation scenarios. Evaluate the 50 V reverse voltage rating against circuit peak inverse voltages to ensure adequate safety margins during operation.

Diode Arrays Part Context

This device belongs to the MBR series of Schottky barrier rectifiers manufactured by onsemi. The series is characterized by high current capability and low forward voltage characteristics suitable for efficient power conversion. The MBR2550CT specifically addresses applications demanding robust performance in compact through-hole form factors.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify electrical parameter equivalence with alternative manufacturers before considering cross-brand substitution.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

Does the device include overvoltage protection features?

Yes, the device incorporates a guardring structure for overvoltage protection.

What is the configuration of the internal diodes?

The device features a dual common cathode configuration.