MBR30H100CTH

Diode Arrays Overview

The MBR30H100CTH is a high-voltage Schottky rectifier manufactured by Taiwan Semiconductor Corporation. It features a dual common-cathode configuration housed in a TO-220AB through-hole package with three pins. The device is rated for a maximum repetitive peak reverse voltage (Vrrm) of 100 V and a continuous forward current (If) of 30 A. Key electrical characteristics include a low forward voltage drop, minimal reverse leakage current, and high surge current capability, making it suitable for efficient power conversion applications.

Diode Arrays Feature Summary

• Dual common-cathode configuration for bridge or center-tapped rectifier circuits
• Low forward voltage drop to minimize conduction losses and improve efficiency
• High thermal stability with an extended operating temperature range
• Guardring structure provides enhanced overvoltage protection

Diode Arrays Applications

• Output rectification in switching mode power supplies (SMPS)
• Freewheeling diodes in DC-to-DC converters
• Polarity protection circuits
• General-purpose high-frequency rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'TH' against the manufacturer's official datasheet to confirm lead plating, tape-and-reel packaging specifications, and RoHS compliance status. Ensure the ordering part number matches the exact mechanical dimensions and pinout configuration required for your PCB footprint. Cross-reference with authorized distributors to confirm current production status and availability.

Diode Arrays Selection Notes

Select this component when a 100 V blocking voltage and 30 A continuous current rating are required in a through-hole package. The dual common-cathode design simplifies circuit topology compared to discrete single diodes. Consider the thermal management requirements associated with the TO-220AB package and the specific forward voltage characteristics at your operating current.

Diode Arrays Part Context

This component belongs to the MBR30HxxCT series of high-voltage Schottky barrier rectifiers from Taiwan Semiconductor. The series utilizes silicon technology optimized for high-efficiency power conversion. The 'H' designation typically indicates high-voltage capability, while 'CT' denotes the common-cathode dual configuration within the standard TO-220 family.

Diode Arrays Replacement Considerations

Potential substitutes include the MBR30100CTC0 (Taiwan Semiconductor) or MBRB30H100CTHE3/45 (Vishay). Verify that alternative parts match the 100 V Vrrm, 30 A If rating, and TO-220-3 package outline before implementation.