Diode Arrays MBR30H45CT-E3/45 product image

MBR30H45CT-E3/45

  • Description:DIODE ARR SCHOTT 45V 15A TO2203
  • Series:-

SKU:47128e06fcf2 Category: Brand:

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MBR30H45CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 15A TO2203. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR30H45CT-E3/45

  • Description:DIODE ARR SCHOTT 45V 15A TO2203
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:620 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:80 µA @ 45 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR30H45CT-E3/45

MBR30H45CT-E3/45

Diode Arrays Overview

The MBR30H45CT-E3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology for improved high-temperature performance and features a TO-220AB package. The device supports a maximum repetitive peak reverse voltage of 45 V and provides a total maximum average forward rectified current of 30 A, with 15 A per diode. Key electrical characteristics include a maximum instantaneous forward voltage of 0.68 V at 15 A and 25 °C, and a maximum reverse current of 80 μA at 25 °C. The component operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

  • High barrier technology designed for enhanced high-temperature operation
  • Guardring structure implemented for overvoltage protection
  • Low forward voltage drop contributing to reduced power losses and high efficiency
  • Qualified under the AEC-Q101 automotive standard

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converter circuits
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm compliance status and qualification level. The E3 suffix indicates RoHS compliance and commercial grade classification, whereas HE3 denotes AEC-Q101 qualification. Confirm that the TO-220AB package variant matches the required thermal and mechanical constraints for the intended design implementation.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for low voltage rectification. Ensure the application demands a 45 V reverse voltage rating and can accommodate the specified 15 A per diode current capability. Verify that the TO-220AB through-hole mounting style aligns with the board layout and thermal management strategy.

Diode Arrays Part Context

This part belongs to the MBR30HxxCT family of dual common cathode Schottky rectifiers from Vishay. The series includes variants with different voltage ratings such as 35 V, 50 V, and 60 V. All members share similar structural features including high barrier technology and guardring protection, offering consistent performance characteristics across the voltage range.

Diode Arrays Replacement Considerations

MBR30H45CTHE3/45

Diode Arrays FAQ

What is the difference between the E3 and HE3 suffixes?

The E3 suffix indicates RoHS compliance and commercial grade classification. The HE3 suffix indicates RoHS compliance along with AEC-Q101 qualification.

How is the forward current derated?

The maximum average forward rectified current must be derated based on the case temperature, as illustrated in the forward derating curve provided in the datasheet.

What is the typical thermal resistance junction to case?

The typical thermal resistance junction to case per diode is 1.5 °C/W for the TO-220AB package.

MBR30H45CT-E3/45MBR30H45CT-E3/45

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