Diode Arrays MBR40045CT product image

MBR40045CT

$70.04
  • Description:DIODE MOD SCHOTT 45V 200A 2TOWER
  • Series:-

SKU:aea0d47bda46 Category: Brand:

  
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MBR40045CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR40045CT

  • Description:DIODE MOD SCHOTT 45V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR40045CT

MBR40045CT

Diode Arrays Overview

The MBR40045CT is a silicon Schottky diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation. The device provides a repetitive peak reverse voltage of 45 V and an average forward current rating of 400 A per package. The maximum forward voltage is 0.70 V at Tj = 25 °C, rising to 0.84 V at Tj = 150 °C. Thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability for robust transient handling
  • Twin Tower package design for efficient thermal management
  • Not ESD sensitive for simplified handling

Diode Arrays Applications

  • Low voltage high frequency inverters
  • Free wheeling applications
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific manufacturer source when ordering, as GeneSiC assets are associated with Navitas Semiconductor. Confirm the Twin Tower package type and screw mount style match your mechanical requirements. Ensure the 45 V reverse voltage rating aligns with your circuit's peak reverse voltage demands. Check for lead configuration variations if applicable.

Diode Arrays Selection Notes

Select this component for applications requiring high current capacity in low voltage environments. The 400 A rating supports heavy load conditions. The wide operating temperature range allows use in harsh thermal environments. Consider the 0.35 °C/W thermal resistance for heatsink sizing calculations to maintain junction temperature within limits.

Diode Arrays Part Context

This part belongs to the MBR400 series of silicon power Schottky diodes. The series includes variants with reverse voltages ranging from 45 V to 100 V. All models share the same 400 A average forward current rating and Twin Tower packaging. The 'CT' suffix indicates the standard terminal configuration.

Diode Arrays Replacement Considerations

MBR40060CT offers a higher 60 V reverse voltage rating with identical current and thermal characteristics.

MBR40045CTMBR40045CT
$70.04
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