Diode Arrays MBR500100CT product image

MBR500100CT

$44.20
  • Description:DIODE MOD SCHOT 100V 250A 2TOWER
  • Series:-

SKU:33d57f0a79b2 Category: Brand:

  
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MBR500100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 250A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR500100CT

  • Description:DIODE MOD SCHOT 100V 250A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):250A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 250 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR500100CT

MBR500100CT

Diode Arrays Overview

The MBR500100CT is a silicon power Schottky diode module from GeneSiC Semiconductor, designed for high-power applications. It features a Twin Tower package with screw mount installation. The device supports a repetitive peak reverse voltage (VRRM) of 100 V and an average forward current (IF(AV)) of 500 A per package. Key electrical parameters include a maximum forward voltage of 0.84 V at Tj = 150 °C and a thermal resistance (junction-case) of 0.30 °C/W per leg. It operates within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability with significant peak forward surge current handling
  • Electrically isolated base plate in a Twin Tower package
  • Not ESD sensitive for safer handling during assembly

Diode Arrays Applications

  • High power rectification circuits
  • DC-DC converters
  • Free-wheeling diodes in inverter bridges

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration, as 'R' variants may have reversed leads. Confirm RoHS compliance status through the manufacturer's latest datasheet or product compliance documents before procurement. Ensure the supplier provides valid traceability for this discrete semiconductor component.

Diode Arrays Selection Notes

Select this module when high average forward current and low forward voltage drop are required in a thermally efficient package. The Twin Tower design facilitates effective heat dissipation via the isolated base plate. Verify that the system's thermal management can maintain junction temperatures within the specified -55 °C to +150 °C operating range under all load conditions.

Diode Arrays Part Context

This component belongs to the MBR500 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 45 V to 100 V while maintaining a consistent 500 A current rating. These modules are engineered for robust performance in demanding power electronics environments requiring high reliability and surge tolerance.

Diode Arrays Replacement Considerations

Cross-reference with other MBR500 series variants such as MBR50045CT or MBR50080CT if lower voltage ratings are acceptable. Ensure any substitute maintains the same Twin Tower package dimensions and screw mount compatibility for direct board integration without mechanical modification.

MBR500100CTMBR500100CT
$44.20
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