Diode Arrays MBR600200CT product image

MBR600200CT

$91.69
  • Description:DIODE MOD SCHOT 200V 300A 2TOWER
  • Series:-

SKU:0bc3fbe50376 Category: Brand:

  
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MBR600200CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR600200CT

  • Description:DIODE MOD SCHOT 200V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR600200CT

MBR600200CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR600200CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 600 A per package. It utilizes a Twin Tower package configuration with a maximum junction-to-case thermal resistance of 0.28 °C/W per leg. The device supports a peak forward surge current of 4000 A and operates within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability designed for demanding power applications
  • Twin Tower package structure for efficient mounting
  • Low forward voltage drop characteristics inherent to Schottky technology

Diode Arrays Applications

  • DC-DC converter output rectification
  • Free-wheeling diodes in high-current circuits
  • Power supply modules requiring low loss rectification

Diode Arrays Procurement Notes

Verify the specific suffix designation, as variants such as (R) indicate reversed leads which alter terminal orientation. Confirm the exact voltage rating matches the design requirement, as this model belongs to a series spanning 150 V to 200 V. Ensure compatibility with screw-mounting hardware specified for the Twin Tower package dimensions before ordering.

Diode Arrays Selection Notes

Select this component when a 200 V blocking voltage and 600 A continuous current capacity are required. The low thermal resistance facilitates heat dissipation in compact designs. Consider the Twin Tower form factor for board space optimization compared to traditional modules. Verify that the operating environment stays within the specified -55 °C to +150 °C junction temperature limits.

Diode Arrays Part Context

This part belongs to the MBR600150CT through MBR600200CTR series of silicon power Schottky diodes. The series shares identical current ratings and package styles, differing primarily in the reverse voltage breakdown specifications. It represents a high-current discrete solution manufactured by GeneSiC Semiconductor.

Diode Arrays Replacement Considerations

Direct substitutes include other models from the same MBR600 series family, specifically the MBR600150CT or MBR600175CT, provided the lower voltage ratings meet the circuit requirements. Cross-brand replacements must match the 600 A current, 200 V rating, and Twin Tower package footprint.

MBR600200CTMBR600200CT
$91.69
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