MCR12N

MCR12N

  • Description:SCR 800V 12A TO220AB
  • Series:-

SKU:23322fffacb2 Category: Brand:

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Product Detailed Parameters

  • Description:SCR 800V 12A TO220AB
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Voltage - Off State:800 V
  • Voltage - Gate Trigger (Vgt) (Max):1 V
  • Current - Gate Trigger (Igt) (Max):20 mA
  • Current - Hold (Ih) (Max):40 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm):100A @ 60Hz
  • SCR Type:Standard Recovery
  • Operating Temperature:-40°C ~ 125°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Voltage - On State (Vtm) (Max):2.2 V
  • Current - On State (It (AV)) (Max):-
  • Current - On State (It (RMS)) (Max):12:00 AM
  • Current - Off State (Max):10 µA

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MCR12N

Overview

The MCR12N is a Silicon Controlled Rectifier (SCR) reverse blocking thyristor designed for half-wave AC control applications. It features a rugged TO-220AB package with glass passivated junctions for reliability. The device supports peak repetitive off-state voltages up to 800 V, an on-state RMS current of 12 A at 80°C case temperature, and a high surge current capability of 100 A. It offers specified minimum and maximum gate trigger currents and holding values to facilitate design flexibility.

Feature Summary

  • Glass passivated junctions ensure reliability and uniformity across operating conditions.
  • High immunity to dv/dt minimizes false triggering in noisy environments.
  • Specified minimum and maximum gate trigger and holding currents simplify circuit design.

Applications

  • Motor controls
  • Heating controls
  • Power supplies

Procurement Notes

Verify the specific voltage rating suffix required for the application, as the base part number covers multiple variants. Confirm that the TO-220AB package style matches the thermal and mechanical constraints of the target system. Ensure compliance with RoHS standards if applicable to the manufacturing process.

Selection Notes

Select the appropriate voltage variant based on the peak repetitive off-state voltage requirements of the circuit. Consider the thermal resistance characteristics when designing heat sinking solutions for continuous operation. Evaluate the gate trigger specifications against the available drive signal capabilities.

Part Context

This component belongs to the MCR12 series of silicon controlled rectifiers manufactured by onsemi. These devices are engineered for industrial and consumer applications requiring robust power switching capabilities in a standard through-hole package format.

Replacement Considerations

Compatible substitutes include MCR12DG, MCR12MG, and MCR12NG, which share identical electrical ratings and pin configurations but differ in their specific voltage blocking capabilities.

FAQ

What is the critical rate of rise of off-state voltage (dv/dt)?

The device exhibits a minimum dv/dt of 100 V/µs at 125°C, ensuring reliable blocking performance under rapid voltage transients.

How does the holding current vary with temperature?

The typical holding current increases as the junction temperature rises, ranging from approximately 4 mA at 25°C to higher values at elevated temperatures.

What is the maximum lead temperature for soldering?

The maximum lead temperature for soldering purposes is 260°C, measured 1/8 inch from the case for a duration of 10 seconds.

MCR12NMCR12N

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