Transistor, Photovoltaic Output Optoisolators MCT52013S product image

MCT52013S

  • Description:OPTOISO 5.3KV TRANS W/BASE 6-SMD
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:f04fa8fc058b Category: Brand:

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MCT52013S is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists onsemi. Its product description is OPTOISO 5.3KV TRANS W/BASE 6-SMD. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for MCT52013S

  • Description:OPTOISO 5.3KV TRANS W/BASE 6-SMD
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:5300Vrms
  • Current Transfer Ratio (Min):120% @ 5mA
  • Current Transfer Ratio (Max):-
  • Turn On / Turn Off Time (Typ):3µs, 12µs
  • Rise / Fall Time (Typ):2.5µs, 16µs
  • Input Type:DC
  • Output Type:Transistor with Base
  • Voltage - Output (Max):30V
  • Current - Output / Channel:150mA
  • Voltage - Forward (Vf) (Typ):1.25V
  • Current - DC Forward (If) (Max):50 mA
  • Vce Saturation (Max):400mV
  • Operating Temperature:-55°C ~ 100°C
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Gull Wing
  • Supplier Device Package:6-SMD

Transistor, Photovoltaic Output Optoisolators datasheet and documents for MCT52013S

MCT52013S

Transistor, Photovoltaic Output Optoisolators Overview

The MCT52013S is a single-channel transistor output optocoupler manufactured by onsemi. It integrates an AlGaAs infrared emitting diode with an NPN phototransistor featuring a base terminal for enhanced switching control. The device utilizes a 6-SMD (Gull Wing) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 30 V, a maximum collector current of 150 mA, and an isolation voltage rating of 5300 Vrms. The unit operates within a temperature range of -55°C to +100°C.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • Integrates an NPN phototransistor with a dedicated base terminal to facilitate faster switching speeds when used with external resistors.
  • Provides high insulation capability rated at 5300 Vrms for safe signal transmission across isolated circuits.
  • Utilizes a compact 6-pin SMD gull-wing package suitable for automated surface-mount assembly processes.

Transistor, Photovoltaic Output Optoisolators Applications

  • CMOS to LSTTL/TTL logic interface circuits
  • LSTTL to LSTTL/TTL interconnection systems
  • General purpose digital signal isolation

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix designation against official datasheets to confirm pinout compatibility and packaging variations. Confirm RoHS compliance status through current manufacturer documentation as regulatory requirements may evolve. Ensure the selected variant matches the required thermal management capabilities for the intended operating environment.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when a phototransistor output with a base terminal is required to achieve higher data rates than standard configurations allow. Evaluate the 30 V collector-emitter voltage limit against the load requirements. Consider the 6-SMD footprint constraints during PCB layout design to ensure adequate clearance for the 5300 Vrms isolation barrier.

Transistor, Photovoltaic Output Optoisolators Part Context

This part belongs to the MCT52XX series of low input current phototransistor optocouplers. The series is designed for efficient coupling between infrared LEDs and NPN phototransistors. It serves as a solution for isolating digital signals in microcontroller interfaces and relay driver applications where moderate speed and high isolation are necessary.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

MCT5201S: Surface mount equivalent with similar electrical characteristics but without the base terminal feature.

Transistor, Photovoltaic Output Optoisolators FAQ

How does the base terminal affect performance?

Connecting an external resistor between the base and emitter allows for faster discharge of the junction capacitance, enabling data rates up to 100K bits/s compared to lower speeds in open-base configurations.

What is the maximum operating temperature?

The device supports a maximum operating temperature of +100°C.

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