MG1052-30

RF Diode Overview

The MG1052-30 is a GaAs Gunn diode manufactured by Microchip Technology, designed for microwave frequency applications. It operates within a minimum frequency of 9500 MHz and a maximum frequency of 35500 MHz. The device provides a continuous wave (CW) output power of 20 mW. This component is classified as an RF Gunn diode, suitable for high-frequency signal generation in specialized electronic systems.

RF Diode Feature Summary

• Utilizes Gallium Arsenide (GaAs) material for efficient microwave operation
• Designed for hermetic packaging to ensure environmental stability
• Capable of generating continuous wave output at high frequencies

RF Diode Applications

• Microwave signal generation
• High-frequency oscillator circuits
• Radar system components

RF Diode Procurement Notes

Verify part status carefully as the MG1052-30 is listed as obsolete by major distributors. Confirm availability through authorized channels or approved substitutes. Ensure compatibility with existing system requirements before procurement due to end-of-life status.

RF Diode Selection Notes

Select this component only if specific frequency ranges between 9.5 GHz and 35.5 GHz are required. Consider the low output power of 20 mW when designing amplifier stages. Evaluate alternative active devices if higher power or modern packaging options are needed.

RF Diode Part Context

This Gunn diode belongs to Microchip's legacy RF component portfolio. It represents older technology compared to current solid-state solutions. The hermetic pill package indicates historical manufacturing standards for reliability in harsh environments.