Full Half-Bridge (H Bridge) Drivers MGD3160AM535EKR2 product image

MGD3160AM535EKR2

$8.15
  • Description:EV INVERTER CONTROL; IGBT & SIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:adc8890a4a92 Category: Brand:

  
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MGD3160AM535EKR2 is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is EV INVERTER CONTROL; IGBT & SIC. Review the specifications below when checking this part for your BOM.

Full Half-Bridge (H Bridge) Drivers specifications for MGD3160AM535EKR2

  • Description:EV INVERTER CONTROL; IGBT & SIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Output Configuration:Half Bridge
  • Applications:DC-DC Converters
  • Interface:PWM, SPI
  • Load Type:Inductive, Capacitive, Resistive
  • Technology:Power MOSFET, IGBT
  • Rds On (Typ):500mOhm LS, 500mOhm HS
  • Current - Output / Channel:15A
  • Current - Peak Output:15A
  • Voltage - Supply:4.5V ~ 40V
  • Voltage - Load:-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Features:-
  • Fault Protection:Over Temperature, Short Circuit
  • Mounting Type:Surface Mount
  • Package / Case:32-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package:32-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q100

Full Half-Bridge (H Bridge) Drivers datasheet and documents for MGD3160AM535EKR2

MGD3160AM535EKR2

Full Half-Bridge (H Bridge) Drivers Overview

The MGD3160AM535EKR2 is a single-channel, current-isolated gate driver from the GD3160 series by NXP Semiconductors. It features magnetic coupling for high-voltage isolation with an insulation voltage of 5000Vrms. The device provides a peak output current of 15A and operates within a load supply voltage range of 4.75V to 40V. It is housed in a 32-SOIC package and supports surface mount installation. The component is qualified to AEC-Q100 standards and functions reliably across a temperature range of -40°C to +150°C TJ.

Full Half-Bridge (H Bridge) Drivers Feature Summary

  • Integrates magnetic high-voltage isolation compatible with 200 to 1700 V IGBT/SiC systems
  • Provides integrated 15 A gate drive capability for compact one-chip solutions
  • Includes integrated current and voltage monitors to protect high-voltage systems

Full Half-Bridge (H Bridge) Drivers Applications

  • HEV/EV traction motor inverters
  • DC/DC converters using silicon IGBTs or SiC MOSFETs
  • Automotive electric vehicle powertrain applications

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix EKR2 against official documentation to confirm reel packaging and exact electrical tolerances. Ensure compatibility with existing board layouts for the 32-SOIC package. Confirm that the 5000Vrms isolation rating meets system safety requirements. Validate AEC-Q100 automotive qualification status for the target application environment.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component for designs requiring robust magnetic isolation and high peak drive current. The integrated monitoring features simplify protection circuitry for SiC and IGBT modules. Consider the wide operating temperature range for harsh automotive environments. Evaluate the 32-SOIC footprint against available PCB space constraints.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the GD3160 family, which includes advanced single-channel gate drivers optimized for SiC MOSFETs and IGBTs. The series emphasizes functional safety compliance and programmability through SPI interfaces. It is designed to reduce bill-of-materials costs while supporting ASIL D compliant inverter solutions.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Consult official substitution lists for equivalent parts within the GD3160 series. Verify pinout compatibility and isolation ratings before replacing. Check for any differences in thermal performance or packaging dimensions.

MGD3160AM535EKR2MGD3160AM535EKR2
$8.15
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