MJE4343G

Single Bipolar Transistors Overview

The MJE4343G is a PNP silicon power transistor manufactured by onsemi, belonging to the MJE series. It features a collector-emitter breakdown voltage of 160 V and a continuous collector current rating of 8 A. The device is housed in a TO-225AB (TO-225) plastic package with three terminals. Key electrical parameters include a maximum power dissipation of 125 W at case temperature and a DC current gain (hFE) ranging from 20 to 70. The transition frequency is specified at 3 MHz, and it operates within a junction temperature range of -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 160 V collector-emitter breakdown voltage for robust operation in demanding circuits.
• High-power handling capacity rated at 125 W dissipation when mounted on a heat sink.
• Complementary pairing available within the MJE series for push-pull amplifier configurations.

Single Bipolar Transistors Applications

• Linear and switching power supply output stages
• Audio power amplifiers
• Motor control driver circuits

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer datasheet revision and RoHS compliance status prior to procurement, as specifications may vary between production lots and legacy sources. Confirm that the TO-225AA/AB package dimensions match the intended thermal management design. Ensure the component meets the required hFE binning for the target application's gain stability needs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage tolerance and significant current drive capabilities in a standard through-hole package. Consider the thermal resistance characteristics and ensure adequate heatsinking to maintain junction temperatures within safe limits during continuous operation. Verify compatibility with complementary NPN devices if used in bridge or push-pull topologies.

Single Bipolar Transistors Part Context

The MJE4343G is part of the MJE family of high-voltage, high-power silicon transistors produced by onsemi. This series is designed for general-purpose power switching and amplification tasks. The device serves as the PNP counterpart to the MJE4342G NPN transistor, facilitating balanced circuit designs in audio and power electronics.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with other manufacturers requires careful verification of pinout compatibility, voltage ratings, and thermal performance.