MMBD770T1

RF Diode Overview

The MMBD770T1G is a single Schottky barrier rectifier manufactured by onsemi, designed for high-speed switching and low-loss applications. It utilizes silicon technology and is housed in an SC-70-3 (SOT-323) surface-mount package. Key electrical parameters include a maximum repetitive peak reverse voltage of 70 V and a forward current rating of 200 mA. The device exhibits a typical forward voltage of 700 mV at rated current and a maximum non-repetitive peak forward surge current of 1 A. Power dissipation is rated at 120 mW, with a reverse leakage current of 9 nA. It operates within a junction temperature range of -55 °C to +125 °C and holds AEC-Q100 qualification.

RF Diode Feature Summary

• Schottky barrier construction enables fast switching speeds and minimal reverse recovery charge.
• Plastic package utilizes Molded Plastic Technology for enhanced mechanical stability.
• Complies with RoHS standards and is halogen-free.

RF Diode Applications

• High-frequency rectification in DC-DC converters
• Clamping diodes in protection circuits
• RF mixer applications

RF Diode Procurement Notes

Verify the complete part number includes the 'G' suffix, indicating lead-free and RoHS compliance, as distributors may list variants differently. Confirm the specific tape-and-reel quantity matches project requirements, typically 3000 units per reel. Ensure the SC-70-3 footprint aligns with the PCB layout specifications before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a compact Schottky diode with 70 V reverse voltage capability is required. Compare the 200 mA continuous forward current against circuit load demands. Consider the SC-70-3 package size constraints relative to available board space. Verify thermal management needs against the 120 mW power dissipation limit under expected operating conditions.

RF Diode Part Context

This device belongs to the MMBD770 series of small-signal Schottky diodes from onsemi. It shares functional similarities with other members like the SMMBD770T1G but differs in packaging and specific electrical characteristics. The series is engineered for general-purpose high-speed switching in consumer and industrial electronics requiring efficient rectification.

RF Diode Replacement Considerations

Direct substitutes include the SMMBD770T1G, though pinout and package dimensions differ. Cross-compatibility with other 70 V Schottky diodes requires verification of forward voltage and reverse leakage specifications. Ensure any replacement maintains the required AEC-Q100 qualification if automotive reliability is mandated.