MMBT3906FN3_R1_00001

Single Bipolar Transistors Overview

The MMBT3906FN3 is a PNP general-purpose switching transistor manufactured by Panjit International Inc. It features an epitaxial silicon planar design housed in a DFN1006-3L package. Key electrical parameters include a collector-emitter voltage (VCEO) of -40V, a continuous collector current (IC) of -200mA, and a maximum power dissipation (PTOT) of 250mW. The device operates within a junction temperature range of -55°C to +150°C and complies with EU RoHS 2.0 standards.

Single Bipolar Transistors Feature Summary

• Utilizes an epitaxial silicon planar design for reliable switching performance.
• Complies with EU RoHS 2.0 directives using green molding compound per IEC 61249 standard.
• Offers low thermal resistance characteristics suitable for surface-mount applications.

Single Bipolar Transistors Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Digital logic interface circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix R1_00001 against official Panjit documentation to confirm reel specifications and marking codes. Ensure compatibility with the DFN1006-3L footprint during PCB layout. Confirm compliance requirements match project specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP switching solution is required in space-constrained designs. The DFN1006-3L package provides a smaller profile compared to traditional SOT-23 packages. Evaluate thermal management needs based on the 500°C/W junction-to-ambient resistance rating for proper heat dissipation.

Single Bipolar Transistors Part Context

This part belongs to the MMBT3906 series of PNP transistors produced by Panjit International Inc. It serves as a compact alternative to larger discrete packages while maintaining similar electrical characteristics to industry-standard small-signal transistors. The DFN1006-3L form factor supports automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other manufacturers offering PNP transistors in the DFN1006-3L package. Verify pinout compatibility and absolute maximum ratings before substitution. Ensure thermal characteristics align with existing board designs.

Single Bipolar Transistors FAQ

What is the maximum power dissipation of the MMBT3906FN3?

The maximum power dissipation is 250 mW when mounted on an FR-4 board measuring 70 x 60 x 1mm.

Does the MMBT3906FN3 meet environmental compliance standards?

Yes, the device is lead-free and complies with EU RoHS 2.0 standards, utilizing green molding compound according to IEC 61249.

What is the typical current gain-bandwidth product (fT)?

The typical current gain-bandwidth product is 250 MHz at a collector current of -10mA and VCE of -20V.