MMBT5550LT1G

Single Bipolar Transistors Overview

The MMBT5550LT1G is a high-voltage NPN silicon bipolar junction transistor manufactured by onsemi. It operates within a collector-emitter voltage (VCEO) of 160 V and a collector-base voltage (VCBO) of 180 V, with an emitter-base breakdown voltage (VEBO) of 6 V. The device supports a maximum continuous DC collector current of 600 mA and dissipates up to 225 mW of power. It features a minimum DC current gain (hFE) of 80 and a maximum of 250. The component functions reliably across a temperature range from -55°C to +150°C and is housed in a surface-mount SOT-23-3 package.

Single Bipolar Transistors Feature Summary

• High-voltage capability with 160 V collector-emitter and 180 V collector-base ratings for robust operation in demanding circuits.
• Automotive qualification under AEC-Q101 standards with PPAP capability, ensuring reliability for unique site and control change requirements.
• Compact SOT-23-3 surface-mount packaging designed for efficient space utilization in modern electronic assemblies.

Single Bipolar Transistors Applications

• General-purpose switching applications requiring high voltage tolerance
• Automotive electronics systems subject to strict qualification standards
• Industrial control circuits utilizing single NPN configurations

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and confirm that the component meets AEC-Q101 automotive qualification requirements if intended for vehicle-mounted systems. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require a single NPN transistor capable of handling 160 V collector-emitter voltage and 600 mA collector current. The SOT-23-3 package is suitable for applications prioritizing compact footprint and surface-mount assembly. Consider the specified thermal dissipation limits and operating temperature range to ensure compatibility with the target environment's thermal management capabilities.

Single Bipolar Transistors Part Context

This part belongs to the MMBT5550L series of high-voltage transistors produced by onsemi. The series utilizes silicon technology and is designed for general-purpose switching roles. The 'LT1G' suffix indicates specific packaging and manufacturing lot details consistent with onsemi's standard product coding conventions for surface-mount devices.

Single Bipolar Transistors Replacement Considerations

MMBT5550LT1 is a compatible predecessor variant within the same series offering identical electrical characteristics and pinout configuration.