Single Bipolar Transistors MMBTA13 product image

MMBTA13

$0.22
  • Description:TRANS NPN DARL 30V 1.2A SOT-23-3
  • Series:-

SKU:fb1ae0a91e31 Category: Brand:

  
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MMBTA13 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 30V 1.2A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MMBTA13

  • Description:TRANS NPN DARL 30V 1.2A SOT-23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):1.2 A
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:125MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MMBTA13

MMBTA13

Single Bipolar Transistors Overview

The MMBTA13 is an NPN silicon Darlington transistor housed in a SOT-23 surface-mount package. It provides high current gain suitable for applications requiring amplification at collector currents up to 1.0A. The device features a maximum continuous collector current of 1.2A and a collector-emitter voltage rating of 30V. Key electrical characteristics include a DC current gain (hFE) ranging from 5,000 to 10,000 at specified test conditions, a collector-emitter saturation voltage of 1.5V, and a total power dissipation capability of 350mW.

Single Bipolar Transistors Feature Summary

  • Designed for applications requiring extremely high current gain
  • Utilizes NPN silicon Darlington configuration
  • Optimized for operation at collector currents up to 1.0A

Single Bipolar Transistors Applications

  • High-gain amplifier circuits
  • Switching applications requiring substantial drive capability
  • Driver stages for loads operating within the 1.0A limit

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's current database, as Fairchild part numbers with underscores may have been converted to dashes during integration into ON Semiconductor systems. Confirm that the component meets all applicable regulatory standards required for your specific deployment environment before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when circuit design demands very high DC current gain in a compact surface-mount footprint. Ensure the application operates within the 30V collector-emitter voltage limit and does not exceed the 1.2A continuous collector current rating. Consider the thermal resistance values if operating near the maximum power dissipation limits without adequate heat sinking.

Single Bipolar Transistors Part Context

This device belongs to the family of NPN Darlington transistors originally manufactured by Fairchild Semiconductor. Following corporate integration, it is now distributed under the ON Semiconductor brand. The datasheet indicates sourcing from process 05 and references the MPSA14 for similar electrical characteristics, establishing its position within standard small-signal switching and amplification product lines.

Single Bipolar Transistors Replacement Considerations

The MPSA14 is referenced in official documentation as having similar characteristics. Verify pinout compatibility and exact parameter tolerances before substituting.

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