MMD832-0805

RF Diode Overview

The MMD832-0805 is a silicon step recovery diode from the MMDx series, designed for millimeter wave multiplication and picosecond pulse forming. It features a fully passivated true mesa construction with beam leads housed in an 0805-2 ceramic package. Key electrical specifications include a minimum breakdown voltage of 20 V, a junction capacitance range of 0.4 to 0.8 pF, and a carrier lifetime between 10 and 15 ns. The typical transition time is 60 ps, with a maximum of 80 ps under test conditions of IF = 10 mA and VR = 10 V. The device supports a rated forward current of 150 mA and operates within a temperature range of -65°C to +175°C.

RF Diode Feature Summary

• Features fully passivated true mesa construction for sharp transitions and improved stability
• Offers industry-fastest transition times suitable for millimeter wave multiplication
• Capable of generating output frequency combs extending beyond 40 GHz

RF Diode Applications

• Millimeter wave frequency multipliers
• Picosecond pulse forming circuits
• High-order harmonic generation

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and screening level. Ensure that the selected variant matches the required thermal resistance and mounting specifications for the intended application environment.

RF Diode Selection Notes

Select this component based on its low junction capacitance and fast transition time requirements for high-frequency operation. Consider the 0805-2 ceramic package dimensions and thermal characteristics when designing the PCB layout. Verify compatibility with the system's drive levels to ensure optimal pulse generation performance.

RF Diode Part Context

This part belongs to the MACOM MMDx & SMMDx Series of silicon step recovery diodes. The series provides various configurations including chip, ceramic packaged, glass packaged, and plastic SMT options to accommodate different power handling and integration needs across microwave and millimeter wave applications.

RF Diode Replacement Considerations

Direct replacements within the same series include MMD830-0805 and MMD835-0805. These alternatives offer similar packaging but differ in breakdown voltage and capacitance values. Evaluate these parameters against the circuit requirements before substitution.

RF Diode FAQ

What are the test conditions for the transition time specification?

For the MMD832-0805, the transition time is tested with a forward current (IF) of 10 mA and a reverse voltage (VR) of 10 V.

What is the maximum operating temperature for this device?

The MMD832-0805 has an operating and storage temperature range of -65°C to +175°C.

How is the junction capacitance measured?

The junction capacitance (CJ) is measured at a reverse voltage (VR) of 6 V and a frequency of 1 MHz.