RF Diode MS8250-P2920 product image

MS8250-P2920

  • Description:RF DIODE SCHOTTKY 3V CHIP
  • Series:-

SKU:67105250367d Category: Brand:

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MS8250-P2920 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE SCHOTTKY 3V CHIP. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MS8250-P2920

  • Description:RF DIODE SCHOTTKY 3V CHIP
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tray
  • Diode Type:Schottky - Anti-Parallel
  • Voltage - Peak Reverse (Max):3V
  • Current - Max:15 mA
  • Capacitance @ Vr, F:80fF @ 0V, 1MHz
  • Resistance @ If, F:7Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 125°C
  • Package / Case:Die
  • Supplier Device Package:Chip
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MS8250-P2920

MS8250-P2920

RF Diode Overview

The MS8250-P2920 is a GaAs Schottky non-hermetic flip chip diode manufactured by Microchip Technology. It belongs to the category of Schottky Diodes & Rectifiers. The component utilizes Gallium Arsenide (GaAs) technology to achieve fast switching times, which ensures minimal signal distortion in high-frequency applications. This specific part number represents a variant within the MS8250 series, characterized by its flip chip packaging style and non-hermetic construction.

RF Diode Feature Summary

  • Utilizes GaAs Schottky technology for high-frequency performance
  • Features fast switching times to minimize signal distortion
  • Constructed as a non-hermetic flip chip device

RF Diode Applications

  • High-frequency rectification circuits
  • RF signal processing applications
  • Microwave detection systems

RF Diode Procurement Notes

Verify the manufacturer source carefully, as the MS8250 series was originally associated with Microsemi Corporation before its acquisition by Microchip Technology. Ensure that the datasheet provided corresponds to the current Microchip portfolio documentation rather than legacy Microsemi files. Confirm the specific suffix P2920 matches the required non-hermetic flip chip specification for your design requirements.

RF Diode Selection Notes

Select this component when GaAs-based Schottky characteristics are required for superior high-frequency operation compared to silicon alternatives. The flip chip form factor is suitable for space-constrained PCB layouts where low profile and direct surface mounting are necessary. Consider the non-hermetic nature of the package if environmental sealing is not a primary design constraint.

RF Diode Part Context

This component is part of the broader MS8250 family, which includes various configurations of Schottky diodes. While the base MS8250 series may include hermetic or different package options, the P2920 suffix specifically denotes the non-hermetic flip chip variant. The technology lineage continues from Microsemi into Microchip's product line, maintaining the original electrical specifications and performance profiles.

RF Diode Replacement Considerations

Direct substitutes should be sought within the Microchip MS8250 series for identical electrical characteristics. Cross-reference with other GaAs Schottky flip chip diodes if availability is an issue, ensuring voltage and current ratings match. Verify that any alternative maintains the non-hermetic flip chip footprint compatibility.

MS8250-P2920MS8250-P2920

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