MSC035SMA070B

Single FETs, MOSFETs Overview

The MSC035SMA070B is a Silicon Carbide (SiC) N-Channel MOSFET from Microchip Technology, housed in a TO-247 package. It features a drain-source voltage of 700 V and a continuous drain current of 75 A at 25 °C case temperature. The device exhibits a typical on-resistance of 35 mΩ at VGS = 20V and 40 mΩ at VGS = 18V. Key electrical parameters include a gate threshold voltage of 3.0 V typical, total gate charge of 93 nC, and a maximum operating junction temperature of 175 °C.

Single FETs, MOSFETs Feature Summary

• Fast switching speed enabled by low internal gate resistance
• Stable operation at high junction temperatures up to 175 °C
• Fast and reliable body diode characteristics
• Superior avalanche ruggedness for robust performance

Single FETs, MOSFETs Applications

• Photovoltaic inverters, converters, and industrial motor drives
• Smart grid transmission and distribution systems
• Hybrid Electric Vehicle powertrains and Electric Vehicle chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and qualification status. Confirm RoHS compliance requirements with the manufacturer or authorized distributor before finalizing procurement. Ensure that the requested quantity aligns with standard factory packaging specifications to avoid handling discrepancies during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency and compact system size due to its superior thermal capabilities and lower switching losses. Consider the fast body diode when designing circuits where eliminating external freewheeling diodes is desired. Evaluate the simple drive requirements and ease of paralleling for multi-device configurations in high-power applications.

Single FETs, MOSFETs Part Context

This part belongs to the mSiC™ discrete MOSFET series manufactured by Microchip Technology. It utilizes Silicon Carbide semiconductor technology to deliver enhanced performance compared to traditional silicon devices. The product line focuses on providing solutions for high-voltage, high-temperature environments common in modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers within the same family or equivalent specifications. Do not assume cross-compatibility with other manufacturers' components without rigorous validation of pinout, thermal resistance, and electrical limits.