MSC360SMA120SCT/R

Single FETs, MOSFETs Overview

The MSC360SMA120SCT/R is a Silicon Carbide (SiC) N-Channel MOSFET manufactured by Microchip Technology. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 360 mΩ at VGS = 20V. The device utilizes a Power Surface Mount Top-Side Cooled (PSMT) 16-lead package with an integrated source sense pin. Key electrical parameters include a continuous drain current of 13A at 25°C, a total gate charge of 21 nC, and a maximum operating junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

• Low capacitances and low gate charge for efficient operation
• Fast switching speed enabled by low internal gate resistance
• Stable operation at high junction temperatures up to 175°C
• Superior avalanche ruggedness and reliable body diode performance

Single FETs, MOSFETs Applications

• Photovoltaic inverters and converters
• Industrial motor drives
• Hybrid Electric Vehicle powertrains
• Electric Vehicle chargers
• Smart grid transmission and distribution systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape-and-reel packaging requirements. Ensure compatibility with PSMT-16L land patterns and thermal management designs. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage SiC performance in a surface-mount form factor. The 1200V rating supports demanding power conversion topologies. Evaluate the 360 mΩ on-resistance against system efficiency targets. Consider the top-side cooling capability for effective thermal dissipation in compact designs.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's mSiC MOSFET family designed for high-efficiency power electronics. It replaces traditional silicon devices to enable lighter and more compact systems. The PSMT package facilitates automated assembly while providing robust thermal pathways essential for high-power density applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same package and specification range should be verified via official cross-reference lists. Ensure any replacement maintains the 1200V rating and compatible gate drive requirements. Thermal interface characteristics must match to preserve system reliability.