Memory IC MSQ220BJC288-10 product image

MSQ220BJC288-10

  • Description:IC SRAM 512MBIT PAR 288FCBGA
  • Series:-
  • Mfr:MoSys, Inc.
  • Package:Tray

SKU:2404872ec85a Category: Brand:

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MSQ220BJC288-10 is listed in the Memory IC range at ChipApex. The manufacturer field lists MoSys, Inc.. Its product description is IC SRAM 512MBIT PAR 288FCBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MSQ220BJC288-10

  • Description:IC SRAM 512MBIT PAR 288FCBGA
  • Series:-
  • Mfr:MoSys, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM, RLDRAM
  • Memory Size:512Mbit
  • Memory Organization:144M x 4
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:-
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:288-BGA, FCBGA
  • Supplier Device Package:288-FCBGA (19x19)
  • Access Time:3.2 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MSQ220BJC288-10

MSQ220BJC288-10

Memory IC Overview

The MSQ220BJC288-10 is a high-performance Quantum Polymer Register (QPR) memory device manufactured by MoSys, Inc. It features a 512Mbit SRAM architecture organized as 144M x 4 bits. The component utilizes a parallel interface with an access time of 3.2 ns and is housed in a 288-pin FCBGA package measuring 19x19 mm.

Memory IC Feature Summary

  • Implements Quantum Polymer Register (QPR) technology for enhanced performance
  • Provides high-density 512Mbit storage capacity
  • Supports parallel data interface operations

Memory IC Applications

  • High-speed digital signal processing systems
  • Network infrastructure equipment
  • Embedded memory solutions requiring low latency

Memory IC Procurement Notes

Verify the current product status before procurement, as this component may be classified as Not Recommended for New Designs (NRND) or obsolete. Confirm package compatibility and lead times with authorized distributors, as availability varies. Ensure sourcing from verified channels to guarantee authenticity and proper handling specifications for the FCBGA form factor.

Memory IC Selection Notes

Select this component when a high-density, low-latency SRAM solution is required for parallel data paths. The QPR technology offers distinct advantages over standard SRAM in specific throughput scenarios. Evaluate the 288-pin FCBGA footprint constraints against board layout requirements. Consider the 3.2 ns access time suitability for target clock frequencies.

Memory IC Part Context

This part belongs to the MoSys MSQ series, which integrates Quantum Polymer Register technology to bridge the gap between SRAM speed and DRAM density. The series is designed for applications demanding high bandwidth and low power consumption. The MSQ220BJC288-10 represents a specific configuration within this family, optimized for 512Mbit capacity.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As the component status is listed as NRND/Obsolete, alternative sourcing requires direct consultation with MoSys or authorized partners for lifecycle management options.

MSQ220BJC288-10MSQ220BJC288-10

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