MSQ230AGE-2512

Memory IC Overview

The MSQ230AGE-2512 is a 1 Gb QPR8 memory IC in a 27mm x 27mm FCBGA package. It features two serial I/O ports (A & B) supporting up to 16 lanes and 64 pins for maximum bandwidth. The device achieves up to 640 Gb/s throughput (320 Gb/s full duplex) at 25 Gb/s SerDes speeds. It offers a tRC of 2.7 ns and supports up to 5 billion transactions per second. The architecture divides memory into eight independent 2M x 72b partitions, selectable via RTL controller.

Memory IC Feature Summary

• Quad Partition Rate architecture providing eight fully independent random-access SRAM partitions within a single device.
• High-speed serial interface using MoSys GCI protocol with signal auto-adaptation for simplified board layout and signal integrity.
• Pin-compatible with MoSys Blazar family Bandwidth Engine devices, enabling seamless system upgrades.
• Supports user-selectable word widths up to 576b across dual ports, managed by supplied RTL memory controllers.

Memory IC Applications

• FPGA acceleration for Xilinx and Intel platforms
• Network table search and statistics processing
• High-bandwidth buffering and firewall applications
• Anomaly detection and genomics data processing

Memory IC Procurement Notes

Verify the specific suffix codes against official MoSys documentation to confirm exact speed grades and temperature ranges. Ensure FPGA designs utilize the provided RTL memory controllers for proper SerDes protocol handling. Confirm pin compatibility requirements if integrating with existing Blazar family designs. Validate that the target application leverages the serial interface benefits over parallel alternatives.

Memory IC Selection Notes

Select this component when replacing multiple QDR SRAMs to reduce pin count and board space while increasing capacity. Ideal for systems requiring high bandwidth with low latency where FPGA SerDes resources are available. Consider the QPR8 architecture for applications needing independent partition access without complex parallel routing. Evaluate the total solution cost including RTL controller integration versus traditional parallel SRAM designs.

Memory IC Part Context

The MSQ230AGE-2512 belongs to the Quazar QPR8 family, designed as a high-capacity, high-speed alternative to QDR SRAM. It addresses memory bottleneck challenges in network and AI applications by offering significantly higher bandwidth and lower power consumption than equivalent density QDR devices. The device simplifies design effort through its serial interface and modular partition architecture.

Memory IC Replacement Considerations

The MSQ230 is positioned as a direct replacement for eight QDR-144Mb devices. It is pin-compatible with MoSys MSR630 and MSR830 Bandwidth Engine devices. Designers upgrading from QDR should utilize the supplied RTL controllers to manage the transition to the serial GCI protocol.

Memory IC FAQ

How does the QPR8 architecture differ from standard QDR SRAM?

The QPR8 divides the 1Gb memory into eight independent 2M x 72b partitions, each functioning as a standalone random-access SRAM. This allows simultaneous access to all partitions, achieving higher aggregate bandwidth compared to single-bank QDR devices.

What is the role of the RTL Memory Controller in the QPR8 system?

The RTL Memory Controller manages the SerDes protocol transparently to the user. It provides a QDR-like parallel interface to the FPGA, handles register sets for each partition, and supports user-selectable word widths up to 576b.

Can the MSQ230 operate over connectors?

Yes, the QPR8 device includes a Signal Auto-adaption feature that eases board layout and signal integrity concerns, allowing operation over connectors without external tuning components.