MSS40-CR46-B49

RF Diode Overview

The MSS40-CR46-B49 is a medium barrier silicon Schottky diode from the MSS40-xxx-x series, configured as a crossover ring quad. It operates with a typical forward voltage of 0.35 V and a minimum breakdown voltage of 3 V. The device features a typical junction capacitance of 0.12 pF and maximum 0.20 pF, with a typical series resistance of 10 Ω and maximum differential resistance of 22 Ω. Its typical cutoff frequency is 177 GHz. Packaged in the B49 outline, it supports a rated reverse voltage of VBR, a forward current of 50 mA, and power dissipation of 100 mW per junction at 25°C.

RF Diode Feature Summary

• Crossover ring quad configuration optimized for mixer applications
• High FCO performance using proprietary N-type epitaxial processes
• Available with Hi-Rel screening options per MIL-PRF-19500 and MIL-PRF-38534

RF Diode Applications

• Mixer circuits requiring LO power between 0 dBm and +6 dBm per diode
• High-frequency RF signal processing
• Microwave instrumentation systems

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm package type and screening level. Ensure compatibility with system thermal requirements, as power dissipation must be derated linearly to zero at 150°C. Confirm that the B49 outline matches the intended PCB footprint and assembly process specifications.

RF Diode Selection Notes

Select this component when a crossover ring quad topology is required for high-frequency mixing. Compare the 177 GHz cutoff frequency and low junction capacitance against other MSS40 variants like the MSS40-448-B41 or MSS40-455-B40 to ensure optimal noise figure and conversion loss for the target application bandwidth.

RF Diode Part Context

This part belongs to the MSS40-xxx-x Series of medium barrier silicon Schottky diodes manufactured by MACOM Technology Solutions. The series includes single junction, tee, and ring quad configurations available in chip, beam lead, and packaged forms. These devices are designed for optimum mixer performance using proprietary fabrication processes on N-type epitaxial substrates.

RF Diode Replacement Considerations

Potential substitutes within the same series include MSS40-448-B41 (Ring Quad) and MSS40-455-B40 (Ring Quad). Verify electrical parameters such as junction capacitance and cutoff frequency to ensure functional equivalence in the specific circuit design.

RF Diode FAQ

What is the recommended local oscillator power for the MSS40-CR46-B49?

Optimum mixer performance is obtained with an LO power of 0 dBm to +6 dBm per diode.

How does the power dissipation rating change with temperature?

The power dissipation is rated at 100 mW per junction at TA = 25°C and must be derated linearly to 0 mW at TA = +150°C.

Is high-reliability screening available for this component?

Yes, Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 is available for this series.