MT29F16G08ADBCAH4:C TR

Memory IC Overview

The Micron MT29F16G08ADBCAH4:C is a NAND flash memory component with a total capacity of 16 Gbit. It features an organization of 2 Gbyte x 8 bits and supports asynchronous and synchronous I/O interfaces. The device operates within a voltage range of 2.7 V to 3.6 V for both VCC and VCCQ. It is designed for surface-mount installation in BGA packages.

Memory IC Feature Summary

• Supports ONFI 2.2-compliant interface standards
• Enables high-speed synchronous I/O performance
• Includes advanced command sets such as program cache and multi-plane operations

Memory IC Applications

• Portable consumer electronics
• Industrial control systems
• Network communication equipment

Memory IC Procurement Notes

Verify the specific suffix 'C TR' against official Micron documentation to confirm tape-and-reel packaging and exact timing grades. Ensure compatibility with existing system voltage levels and interface requirements before procurement.

Memory IC Selection Notes

Select this part for applications requiring 16 Gbit density with flexible asynchronous or synchronous access modes. Consider the BGA package constraints and thermal characteristics during PCB layout design to ensure reliable operation.

Memory IC Part Context

This component belongs to the Micron MT29F series of NAND flash memories. It utilizes Multi-Level Cell (MLC) technology to provide higher density within standard form factors, suitable for data storage in embedded systems.

Memory IC Replacement Considerations

Consult Micron's official cross-reference guides for compatible alternatives. Verify pinout and electrical specifications match before substituting with other NAND flash devices.