MT29RZ4B2DZZHGSK-18 W.80E

Memory IC Overview

The MT29RZ4B2DZZHGSK-18W.80E is a multichip package integrating NAND flash and LPDDR2 memory, manufactured by Micron Technology. It features a parallel interface with a maximum clock frequency of 533 MHz. The device offers a storage capacity of 4 Gbit for NAND (organized as 512M x 8) and 2 Gbit for LPDDR2 (organized as 64M x 32). It operates within a voltage range of 1.7 V to 3.6 V and supports asynchronous timing. The component is housed in a 162-pin VFBGA package and is designed for industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

• Integrates NAND flash and LPDDR2 DRAM in a single multichip package
• Supports high-speed parallel data transfer via dedicated interfaces
• Provides robust data retention and reliability for enterprise applications

Memory IC Applications

• Industrial embedded systems requiring combined non-volatile and volatile memory
• Enterprise storage solutions utilizing MASSFLASH technology
• Mobile devices needing compact memory integration

Memory IC Procurement Notes

Verify the specific suffix codes against official Micron documentation to confirm exact speed grades and packaging options. Confirm current lifecycle status, as some variants may be discontinued or subject to limited availability. Ensure compatibility with system voltage requirements and thermal management specifications before procurement.

Memory IC Selection Notes

Select this component when a compact solution combining NAND and LPDDR2 is required. Verify that the host system supports the parallel interface protocol and 533 MHz clock speed. Ensure the operating environment falls within the specified industrial temperature range and voltage limits for reliable performance.

Memory IC Part Context

This part belongs to the Micron MT29RZ series of multichip packages, which combine NAND flash and mobile LPDDR2 memory. These components are designed to reduce board space and simplify design complexity for applications requiring both persistent storage and high-speed temporary memory in a single footprint.

Memory IC Replacement Considerations

Consult official Micron substitution guides for verified alternatives. Generic cross-references may not match the specific pinout, timing parameters, or integrated memory organization of this multichip package.