MT40A1G16KNR-075 IT:E TR

Memory IC Overview

The Micron MT40A1G16KNR-075 IT:E is a DDR4 SDRAM component with a total storage capacity of 16 Gbit. It features a data bus width of 16 bits and an organization of 1 G x 16. The device operates within a supply voltage range of 1.14 V to 1.26 V and supports a maximum clock frequency of 1.6 GHz. It is housed in a 96-ball FBGA package (9x13 mm) designed for surface mount technology. The operational temperature range extends from -40°C to +95°C, ensuring reliability in demanding environments.

Memory IC Feature Summary

• Supports high-speed parallel data transfer via a 16-bit interface architecture
• Operates within standard DDR4 voltage specifications for power efficiency
• Designed for robust performance across extended industrial temperature ranges

Memory IC Applications

• Signal processing boards requiring high-bandwidth memory interfaces
• Embedded systems utilizing FPGA-based architectures
• Industrial computing platforms needing wide temperature tolerance

Memory IC Procurement Notes

Verify the specific suffix IT:E against official Micron documentation to confirm pinout and electrical characteristics. Confirm current production status directly with the manufacturer or authorized distributors, as availability may vary. Ensure compatibility with system voltage requirements and thermal management solutions before integration.

Memory IC Selection Notes

Select this component when a 16 Gbit density with a 16-bit bus width is required for high-throughput applications. Consider the 96-ball FBGA footprint for PCB layout constraints. Evaluate the -40°C to +95°C operating range against environmental conditions. Compare against other MT40A series variants if different densities or bus widths are needed.

Memory IC Part Context

This part belongs to the Micron MT40A family of DDR4 SDRAM devices. These components are engineered for high-performance computing and networking applications. The MT40A series offers various densities and configurations to support diverse system memory requirements while maintaining low power consumption standards typical of modern DRAM technologies.