Memory IC MT41K256M16HA-125 M AIT:E product image

MT41K256M16HA-125 M AIT:E

  • Description:IC DRAM 4GBIT PARALLEL 96FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:a24bfff5edbe Category: Brand:

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MT41K256M16HA-125 M AIT:E is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 4GBIT PARALLEL 96FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT41K256M16HA-125 M AIT:E

  • Description:IC DRAM 4GBIT PARALLEL 96FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - DDR3L
  • Memory Size:4Gbit
  • Memory Organization:256M x 16
  • Memory Interface:Parallel
  • Clock Frequency:800 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.283V ~ 1.45V
  • Operating Temperature:-40°C ~ 95°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:96-TFBGA
  • Supplier Device Package:96-FBGA (9x14)
  • Access Time:13.75 ns
  • Grade:Automotive
  • Qualification:AEC-Q100

Memory IC datasheet and documents for MT41K256M16HA-125 M AIT:E

MT41K256M16HA-125 M AIT:E

Memory IC Overview

The MT41K256M16HA-125 M AIT:E is a Micron DDR3L SDRAM with a 4 Gbit density and 256 Meg x 16 organization. It operates at VDD = VDDQ = 1.35V (1.283–1.45V) and supports backward compatibility to 1.5V. The device features an 8n-bit prefetch architecture, differential clock inputs, and eight internal banks. It utilizes a 96-ball FBGA package (Rev. E HA). The -125 speed grade targets a 1600 MT/s data rate with a cycle time of 1.25ns at CL=11. It supports fixed burst length 8 and burst chop 4 via mode register set.

Memory IC Feature Summary

  • Backward compatible to 1.5V applications
  • Nominal and dynamic on-die termination for data, strobe, and mask signals
  • Selectable burst chop or burst length on-the-fly
  • Multipurpose register and output driver calibration

Memory IC Applications

  • High-performance computing systems
  • Server and enterprise storage platforms
  • Automotive infotainment and control modules

Memory IC Procurement Notes

Verify the specific ordering suffixes against the official Micron catalog to confirm package dimensions and temperature ratings. Ensure the component matches the required Rev. E die specification. Confirm that the supply chain documentation aligns with the manufacturer's current product availability status.

Memory IC Selection Notes

Select this part for designs requiring low voltage operation with standard DDR3 compatibility. The 16-bit width suits high-bandwidth memory interfaces. Verify system power rails support the 1.35V nominal requirement while maintaining backward compatibility if legacy 1.5V signaling is present in the design.

Memory IC Part Context

This component belongs to the Micron 4Gb DDR3L SDRAM family, which includes x4, x8, and x16 configurations. The MT41K256M16 variant specifically provides a 16-bit data bus width. It shares architectural features with other members of the series, such as write leveling and self-refresh modes, tailored for mobile and embedded applications.

Memory IC Replacement Considerations

Compatible substitutes include MT41K256M16TW-125 and MT41K256M16LY-125 from the same family. These alternatives offer different package revisions but maintain identical electrical specifications and timing parameters for the -125 speed grade.

MT41K256M16HA-125 M AIT:EMT41K256M16HA-125 M AIT:E

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