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MT41K512M8V00HWC1-N001 is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 4GBIT PARALLEL. Review the specifications below when checking this part for your BOM.
The MT41K512M8V00HWC1-N001 is a Micron Technology SDRAM component utilizing DDR3L technology. It provides a storage capacity of 4Gbit with a memory organization of 512M x 8. The device features a parallel interface and operates within a voltage range of 1.283V to 1.45V. Designed for automotive applications, it holds AEC-Q100 qualification and supports a temperature range of -40°C to 105°C (TC). The component is housed in a surface-mount package.
Verify the specific suffix N001 against official Micron documentation to confirm die specifications and availability status. Ensure compatibility with automotive environmental requirements before procurement. Confirm package dimensions match design constraints.
Select this part for designs requiring automotive-certified volatile memory with low power consumption. Verify that the 512M x 8 organization meets bandwidth and capacity needs. Ensure the PCB layout supports the required package type and thermal management for the specified operating temperature range.
This component belongs to Micron's DDR3L family of synchronous dynamic random-access memories. It is engineered for high-performance embedded applications where power efficiency and reliability are critical. The automotive qualification distinguishes it from commercial-grade variants in the same technical lineage.
Publicly confirmed substitute part numbers are not available in the provided source material.
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