SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
MT52L256M64D2GN-107 WT ES:B TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 16GBIT 933MHZ 256FBGA. Review the specifications below when checking this part for your BOM.
The MT52L256M64D2GN-107 WT ES:B TR is a Mobile LPDDR3 SDRAM component manufactured by Micron Technology Inc. It features a storage capacity of 16 Gbit organized as 256M x 64 bits. The device operates at a supply voltage of 1.2V and utilizes a 256-pin WFBGA package. This specific variant includes the 'ES' designation, indicating it is an Engineering Sample intended for development and validation purposes rather than mass production.
This item is identified as an Engineering Sample (ES). Such components are typically not available through standard commercial distribution channels or authorized distributors. Procurement usually requires direct engagement with the manufacturer's sales engineering team or participation in specific evaluation programs. Availability is strictly limited and subject to change without notice.
Engineers should select this part only if they require physical silicon for early-stage validation before finalizing designs with Production Release parts. The Engineering Sample status implies that electrical characteristics may differ slightly from the final datasheet specifications. Designers must verify all parameters against the latest official documentation before committing to a final bill of materials.
This component belongs to the Micron MT52L series of Mobile LPDDR3 DRAMs. These chips are designed for smartphones, tablets, and other battery-powered mobile applications requiring high bandwidth and low power efficiency. The 16 Gbit density represents a high-capacity option within this generation of memory technology.
No verified public substitute part numbers are available for this specific Engineering Sample configuration. Final production equivalents would be standard MT52L256M64D2GN-107 variants, but these are distinct from the ES revision.
Explore related parts through Memory, Integrated Circuits (ICs), all product categories, ChipApex homepage.

Choose an AC to DC converter by input range, output demand, isolation, efficiency and thermal derating. Compare architectures and check installation needs.
Read More
Select a bridge rectifier by reverse voltage, capacitor charging current, startup surge and cooling. Work through a stated DC voltage and ripple example.
Read More
MT52L256M64D2GN-107 WT ES:B TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is…
Read More
MT52L256M64D2GN-107 WT ES:B TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is…
Read More
See when an inductor behaves linearly, how DC bias and saturation reduce inductance, and which current and temperature curves to check.
Read More
MT52L256M64D2GN-107 WT ES:B TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is…
Read More
MT52L256M64D2GN-107 WT ES:B TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is…
Read More
Learn what an integrated circuit is, how ICs work, the main types and the specs to check before choosing a part for your design…
Read More
See how a MEMS gyroscope measures angular rate, why its angle estimate drifts, and which range, noise, interface and temperature specs to compare.
Read More
Understand RF attenuator dB values, fixed and programmable types, impedance, power limits and noise tradeoffs before choosing parts for an RF signal path.
Read More
MT52L256M64D2GN-107 WT ES:B TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is…
Read More
Learn why PTC resistance rises with temperature, how it differs from NTC, and which ratings matter for sensing and protection.
Read More