Memory IC MT52L256M64D2GN-107 WT ES:B TR product image

MT52L256M64D2GN-107 WT ES:B TR

$16.79
  • Description:IC DRAM 16GBIT 933MHZ 256FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)

SKU:17fc41b0b80c Category: Brand:

  
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MT52L256M64D2GN-107 WT ES:B TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 16GBIT 933MHZ 256FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT52L256M64D2GN-107 WT ES:B TR

  • Description:IC DRAM 16GBIT 933MHZ 256FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPDDR3
  • Memory Size:16Gbit
  • Memory Organization:256M x 64
  • Memory Interface:-
  • Clock Frequency:933 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.2V
  • Operating Temperature:-30°C ~ 85°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:256-WFBGA
  • Supplier Device Package:256-FBGA (14x14)
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT52L256M64D2GN-107 WT ES:B TR

MT52L256M64D2GN-107 WT ES:B TR

Memory IC Overview

The MT52L256M64D2GN-107 WT ES:B TR is a Mobile LPDDR3 SDRAM component manufactured by Micron Technology Inc. It features a storage capacity of 16 Gbit organized as 256M x 64 bits. The device operates at a supply voltage of 1.2V and utilizes a 256-pin WFBGA package. This specific variant includes the 'ES' designation, indicating it is an Engineering Sample intended for development and validation purposes rather than mass production.

Memory IC Feature Summary

  • Mobile LPDDR3 architecture optimized for low power consumption in portable devices
  • High-density 16 Gbit storage capacity within a compact 256-pin WFBGA form factor
  • Engineering sample status providing early access to hardware specifications

Memory IC Applications

  • Hardware design verification and prototyping
  • System-level integration testing
  • Performance benchmarking for mobile platforms

Memory IC Procurement Notes

This item is identified as an Engineering Sample (ES). Such components are typically not available through standard commercial distribution channels or authorized distributors. Procurement usually requires direct engagement with the manufacturer's sales engineering team or participation in specific evaluation programs. Availability is strictly limited and subject to change without notice.

Memory IC Selection Notes

Engineers should select this part only if they require physical silicon for early-stage validation before finalizing designs with Production Release parts. The Engineering Sample status implies that electrical characteristics may differ slightly from the final datasheet specifications. Designers must verify all parameters against the latest official documentation before committing to a final bill of materials.

Memory IC Part Context

This component belongs to the Micron MT52L series of Mobile LPDDR3 DRAMs. These chips are designed for smartphones, tablets, and other battery-powered mobile applications requiring high bandwidth and low power efficiency. The 16 Gbit density represents a high-capacity option within this generation of memory technology.

Memory IC Replacement Considerations

No verified public substitute part numbers are available for this specific Engineering Sample configuration. Final production equivalents would be standard MT52L256M64D2GN-107 variants, but these are distinct from the ES revision.

MT52L256M64D2GN-107 WT ES:B TRMT52L256M64D2GN-107 WT ES:B TR
$16.79
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