MXP120A045FL-GE3

$14.25

Description：SILICON CARBIDE MOSFET
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:5f05fbece0b4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

MXP120A045FL-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MXP120A045FL-GE3

Description：SILICON CARBIDE MOSFET
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for MXP120A045FL-GE3

MXP120A045FL-GE3

Single FETs, MOSFETs Overview

The MXP120A045FL-GE3 is a MaxSiC 1200 V N-channel silicon carbide MOSFET from Vishay Siliconix. It features a TO-247AD 4L package with a typical on-resistance of 45 mΩ at 25 °C and a continuous drain current of 49 A. The device supports fast switching with a total gate charge of 75.6 nC and withstands short-circuit conditions for 3 μs. Maximum power dissipation reaches 227 W at 25 °C case temperature, operating within a junction range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Fast switching speed capability
Short circuit withstand time of 3 microseconds
Lead-free and halogen-free material categorization

Single FETs, MOSFETs Applications

Charger systems
Boost inverter circuits
DC/DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as stated in the datasheet. Ensure the component matches the TO-247AD 4L physical footprint and pinout configuration required by the target PCB layout. Confirm that the application environment remains within the specified maximum junction temperature limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation and low conduction losses are critical. The 1200 V rating provides robust headroom for industrial power stages. Evaluate thermal management requirements carefully, as the 45 mΩ resistance generates significant heat at higher currents. Verify that the driver circuit can handle the recommended gate-source voltage range of -5 V to +20 V for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay MaxSiC series of wide-bandgap semiconductors designed for high-efficiency power conversion. It utilizes silicon carbide technology to achieve superior thermal conductivity and breakdown voltage compared to traditional silicon devices. The MaxPower branding indicates its focus on high-power density applications requiring reliable switching under harsh electrical conditions.