N0602N-S19-AY

Single FETs, MOSFETs Overview

The N0602N-S19-AY is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 100 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 4.6 mΩ. It is housed in a TO-220AB through-hole package, providing thermal dissipation capabilities of 1.5 W at ambient temperature and 156 W at case temperature.

Single FETs, MOSFETs Feature Summary

• N-channel power MOSFET architecture for efficient switching applications
• Low on-resistance design to minimize conduction losses
• Through-hole TO-220AB package for robust mechanical mounting

Single FETs, MOSFETs Applications

• Power supply circuits requiring low-side switching
• Motor control systems operating within specified voltage limits
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official Renesas documentation to ensure correct specifications. Confirm package type and pinout compatibility with existing board layouts. Check for any specific handling or storage requirements detailed in the manufacturer's datasheet before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rating and high current capacity are required. Ensure the thermal management solution supports the specified power dissipation ratings. Verify that the gate drive voltage aligns with the device's threshold characteristics for optimal performance.

Single FETs, MOSFETs Part Context

This component belongs to the Renesas power MOSFET family, designed for general-purpose power switching. It utilizes silicon technology to deliver reliable performance in industrial and consumer electronics applications where efficiency and durability are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference key parameters such as voltage, current, and package dimensions when evaluating potential substitutes.