NCP3418DR2G

Overview

The NCP3418DR2G is a high-side and low-side MOSFET gate driver manufactured by onsemi. It operates within a supply voltage range of 4.6 V to 13.2 V and utilizes an SOIC-8 surface-mount package. The device features two independent drivers with rise and fall times of 16 ns and 11 ns, respectively. It supports operation at temperatures from 0°C to +85°C and complies with RoHS standards.

Feature Summary

• Dual-channel configuration providing independent high-side and low-side drive capabilities for power switching applications.

Applications

• General-purpose MOSFET gate driving in power conversion circuits

Procurement Notes

Verify the specific suffix DR2G against the manufacturer's current datasheet to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the ordering number with official distributor catalogs to validate availability and authenticity before procurement.

Selection Notes

Select this component when a dual-channel driver with moderate speed (16 ns rise/11 ns fall) is required for standard MOSFETs. The 4.6 V minimum operating voltage suits single-supply logic interfaces. Consider thermal performance and PCB layout constraints associated with the SOIC-8 package for optimal heat dissipation.

Part Context

This part belongs to the NCP34xx series of gate drivers from onsemi. It is designed for efficient control of power switches in various electronic systems. The SOIC-8 packaging facilitates automated assembly and compact board designs compared to through-hole alternatives.

Replacement Considerations

NCP3418BMNR2G offers similar functionality but utilizes a DFN package instead of SOIC-8. Verify pin compatibility and thermal characteristics before substitution.