NDB6030PL

Single FETs, MOSFETs Overview

The NDB6030PL is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 30 V and a continuous drain current of 30 A. The device utilizes a D2PAK (TO-263) surface-mount package with three pins. Key electrical parameters include a maximum drain-source resistance of 75 mΩ, a minimum gate threshold voltage of 1 V, and a maximum power dissipation of 75 W. The typical gate charge is 26 nC at 5 V. It operates within a temperature range of -65 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• P-channel enhancement mode operation for high-side switching applications
• Logic level compatible with a minimum gate threshold voltage of 1 V
• High thermal stability supporting junction temperatures up to +175 °C

Single FETs, MOSFETs Applications

• Power management circuits requiring low-side or high-side load switching
• DC-DC converter output stages
• Motor control driver interfaces

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as the component is currently produced by onsemi following industry consolidation. Confirm the specific suffix 'PL' matches the required tape-and-reel packaging configuration if applicable. Ensure the datasheet version aligns with the requested electrical tolerances and thermal characteristics before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with a 30 V rating and 30 A current capacity is required in a D2PAK package. Consider the 75 mΩ on-resistance for conduction loss calculations. Verify that the logic-level gate drive requirements are met by the system controller, given the 1 V minimum threshold specification.

Single FETs, MOSFETs Part Context

This part belongs to the NDB series of power MOSFETs, originally developed under Fairchild Semiconductor's portfolio. Following the acquisition of Fairchild's semiconductor assets, production and documentation responsibilities transitioned to onsemi. The device maintains the standard TO-263 form factor common in industrial and consumer power electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other P-channel MOSFETs rated for 30 V and 30 A in D2PAK packages. Verify pinout compatibility and ensure equivalent Rds(on) and thermal performance metrics match the original design requirements.