NSV1C301ET4G

Single Bipolar Transistors Overview

The NSV1C301ET4G is an NPN silicon transistor from onsemi's e2PowerEdge family, designed for low voltage, high speed switching applications. It features ultra-low saturation voltage and high current gain capability. The device is housed in a DPAK (TO-252-3) surface mount package. Key electrical ratings include a collector-emitter voltage of 100 Vdc, continuous collector current of 3.0 Adc, and peak collector current of 6.0 Adc. Total power dissipation is rated at 33 W at 25°C case temperature and 2.1 W at 25°C ambient temperature. The transition frequency is 120 MHz, with a DC current gain ranging from 80 to 360 depending on operating conditions.

Single Bipolar Transistors Feature Summary

• Ultra-low saturation voltage for efficient energy control
• High current gain capability suitable for direct drive from PMU outputs
• AEC-Q101 qualified and PPAP capable for automotive applications
• Linear Gain characteristic ideal for analog amplifier circuits

Single Bipolar Transistors Applications

• DC-DC converters
• Power management in portable and battery-powered products
• Low voltage motor controls in mass storage products
• Air bag deployment systems
• Instrument clusters

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix when purchasing. The 'NSV' prefix indicates the component meets unique site and control change requirements for automotive and other specialized applications. Confirm that the AEC-Q101 qualification status aligns with your project's reliability standards. Ensure the Pb-free and RoHS compliant specifications meet environmental compliance requirements for your target market.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring low saturation voltage and high current handling in a surface-mount format. The high DC current gain allows for direct driving from power management unit control outputs without additional base drive circuitry. Consider the thermal resistance characteristics and derating curves for accurate junction temperature calculations under varying load conditions.

Single Bipolar Transistors Part Context

This part belongs to onsemi's e2PowerEdge family of low VCE(sat) transistors. It serves as a complement to the NSS1C300ET4G within the same product line. The device utilizes silicon technology and is manufactured in a DPAK-3 package. The NSV prefix distinguishes it by meeting specific automotive quality and supply chain control requirements.

Single Bipolar Transistors Replacement Considerations

NSS1C301ET4G-VF01 is listed as a parameter equivalent substitute.