NTD3055-094G

Single FETs, MOSFETs Overview

The NTD3055-094G is a single N-channel power MOSFET manufactured by onsemi, designed for low-voltage, high-speed switching applications. It features a DPAK (TO-252) surface-mount package with four terminals. Key electrical specifications include a drain-to-source voltage rating of 60 Vdc and a continuous drain current capacity of 12 Adc at 25°C case temperature. The device exhibits a typical static drain-to-source on-resistance of 84 mΩ at VGS = 10 Vdc and ID = 6.0 Adc, with a maximum rated value of 94 mΩ. Total power dissipation is specified at 48 W at 25°C ambient temperature. The component operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Optimized for low voltage and high speed switching in power supplies and converters
• Enhanced performance characteristics including lower RDS(on), tighter VSD, and reduced reverse recovery time
• Capable of withstanding high energy in avalanche and commutation modes
• Suitable for bridge circuits requiring critical diode speed and safe operating areas

Single FETs, MOSFETs Applications

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and prefix requirements against the manufacturer's official documentation before procurement. Confirm that the selected variant meets all necessary automotive qualification standards if applicable, such as AEC-Q101 compliance or PPAP capability. Ensure the package type matches the intended PCB layout constraints. Cross-reference the part number with the latest datasheet revision to confirm availability status, as certain configurations may be discontinued or subject to change without notice.

Single FETs, MOSFETs Selection Notes

Select this component based on its 60 V breakdown voltage and 12 A continuous current rating suitable for low-voltage DC-DC conversion tasks. Evaluate the thermal resistance parameters relative to the expected heat sinking strategy, considering the 48 W power dissipation limit at 25°C. Assess the gate charge and switching times to ensure compatibility with the driving circuitry's frequency requirements. Verify that the source-drain diode characteristics align with the synchronous rectification or freewheeling demands of the target topology.

Single FETs, MOSFETs Part Context

This device belongs to the NTD3055 series of power MOSFETs from onsemi. It is specifically engineered to provide improved efficiency in power management systems through reduced conduction and switching losses. The DPAK package offers a balance between thermal performance and space-saving design for surface-mount applications. The product line includes variants with different prefixes indicating specific manufacturing sites or automotive qualifications.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official discontinuation notices for alternative recommendations. The NVD3055-094T4G is an equivalent variant featuring an NVD prefix for automotive applications requiring unique site and control change requirements. Verify pinout compatibility and electrical parameter equivalence before substitution.