NTHL025N065SC1

$14.70

Description：SIC MOS TO247-3L 650V
Series：-
Mfr：onsemi
Package：Tube

SKU:a23dea7a70fa Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTHL025N065SC1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SIC MOS TO247-3L 650V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTHL025N065SC1

Description：SIC MOS TO247-3L 650V
Series：-
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V, 18V
Rds On (Max) @ Id, Vgs：28.5mOhm @ 45A, 18V
Vgs(th) (Max) @ Id：4.3V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs：164 nC @ 18 V
Vgs (Max)：+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds：3480 pF @ 325 V
FET Feature：-
Power Dissipation (Max)：348W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for NTHL025N065SC1

NTHL025N065SC1

Single FETs, MOSFETs Overview

The NTHL025N065SC1 is a silicon carbide (SiC) MOSFET from onsemi's EliteSiC series, packaged in a TO-247-3LD form factor. It features an N-channel enhancement mode configuration with a drain-source breakdown voltage of 650V. The device supports a continuous drain current of 99A at 25°C and 70A at 100°C case temperature. Key electrical parameters include a typical on-resistance of 19mΩ at VGS=18V and 25mΩ at VGS=15V. Total gate charge is 164nC, with output capacitance at 278pF. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Utilizes silicon carbide technology for high thermal stability and low conduction losses.
Features ultra-low gate charge to minimize switching energy and drive requirements.
Includes 100% avalanche testing to ensure robustness under fault conditions.

Single FETs, MOSFETs Applications

On-board chargers for electric vehicles
DC/DC converters in hybrid and electric vehicles
High-efficiency power supply systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant against design requirements, as the component is available in TO-247-3LD configurations. Confirm that the manufacturer datasheet aligns with the required electrical thresholds for your circuit design. Ensure compliance with RoHS directives and check for any REACH SVHC declarations relevant to your region before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high efficiency and thermal resilience in automotive or industrial environments. The low on-resistance and gate charge characteristics make it suitable for high-frequency switching applications where minimizing power loss is critical. Consider the 175°C maximum junction temperature rating for operation in thermally constrained spaces without excessive cooling infrastructure.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's EliteSiC portfolio, which focuses on advanced silicon carbide power semiconductors. The NTHL025N065SC1 represents a specific iteration within the NTHL series, optimized for through-hole mounting in standard TO-247 packages. It complements other devices in the lineup by offering a balance of current handling capability and switching speed for mid-power applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include NVHL025N065SC1 or similar EliteSiC TO-247-3L devices from onsemi with matching 650V ratings and comparable Rds(on) values. Verify pinout compatibility and thermal resistance specifications before swapping components in existing designs.