NTHS5404T1G

Single FETs, MOSFETs Overview

The NTHS5404T1G is a single-channel N-Channel enhancement mode MOSFET manufactured by onsemi using silicon technology. It features a ChipFET-8 surface-mount package designed for high-efficiency switching applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 7.2 A. The device exhibits a maximum on-resistance (Rds On) of 25 mOhms at specified gate-source voltages, with a gate threshold voltage (Vgs th) of 600 mV. Gate charge (Qg) is 18 nC, supporting fast switching with rise and fall times of 7 ns. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.3 W.

Single FETs, MOSFETs Feature Summary

• N-Channel enhancement mode configuration for low-side or high-side switching control
• Low on-resistance characteristic optimized for efficient power handling in compact packages
• Fast switching performance with minimal gate charge for reduced dynamic losses
• Robust thermal capability supporting operation up to 150°C junction temperature

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Load switching in portable electronics
• Power management circuits requiring low voltage drive compatibility

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS compliance status via official manufacturer documentation before integration. Check for end-of-life notices as availability may be restricted. Ensure storage conditions meet moisture sensitivity level requirements for lead-free components. Validate package markings against datasheet specifications to prevent installation errors.

Single FETs, MOSFETs Selection Notes

Select this component when a 20 V rated N-Channel MOSFET with moderate current capacity is required. The 25 mOhm on-resistance balances conduction losses with cost efficiency. Consider the ChipFET-8 package for space-constrained designs needing reliable surface-mount assembly. Evaluate thermal management needs given the 1.3 W power dissipation limit in free air.

Single FETs, MOSFETs Part Context

Part of the NTHS series from onsemi, focusing on small-signal power switching solutions. Designed for consumer and industrial applications requiring reliable performance in limited footprint scenarios. Complements broader discrete semiconductor portfolios for complete power stage implementations.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for pin-compatible alternatives with similar voltage and current ratings. Verify parameter equivalence for Rds On, Qg, and package dimensions before design changes.