NTLJS4114NTAG

$0.56

Description：MOSFET N-CH 30V 3.6A 6WDFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:6c3d02c1ab27 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTLJS4114NTAG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 3.6A 6WDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTLJS4114NTAG

Description：MOSFET N-CH 30V 3.6A 6WDFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：35mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：650 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-WDFN (2x2)
Package / Case：6-WDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for NTLJS4114NTAG

NTLJS4114NTAG

Single FETs, MOSFETs Overview

The NTLJS4114NTAG is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 7.8 A. The device utilizes a WDFN surface-mount package with six pins. Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 55 mΩ, a typical gate charge of 8.5 nC at Vgs = 4.5 V, and a maximum gate threshold voltage of 1 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 700 mW.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode configuration for switching applications
Low on-resistance for efficient power handling
Surface-mount WDFN package design

Single FETs, MOSFETs Applications

General purpose power switching
DC-DC converter circuits
Load management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct variant selection. Confirm that the component meets all required environmental standards and RoHS compliance specifications for the intended deployment. Cross-reference the datasheet parameters with system requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component based on its 30 V voltage rating and 7.8 A current capacity. Ensure the thermal management solution supports the 700 mW power dissipation limit. Verify compatibility with the target gate drive voltage levels given the 1 V threshold specification. Check package dimensions for PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for low-voltage, high-current applications requiring compact surface-mount solutions. The WDFN package facilitates automated assembly and space-constrained designs.