NTLUS020N03CTAG

Single FETs, MOSFETs Overview

The NTLUS020N03CTAG is a single N-channel power MOSFET from onsemi, designed for surface-mount applications. It features a UDFN-6 package with dimensions of 1.6x1.6 mm. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 8.2 A. The device exhibits a maximum on-resistance (Rds(on)) of 13 mΩ at standard test conditions. Gate characteristics specify a threshold voltage (Vgs(th)) range typically centered around 1.2 V, with a maximum gate-source voltage (Vgs) of ±20 V. The total gate charge (Qg) is 8 nC. Thermal performance includes a maximum power dissipation of 1.49 W and an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Cool Trench technology for enhanced switching efficiency and low conduction losses.
• Compact UDFN-6 footprint minimizes board space requirements while maintaining robust thermal performance.
• Designed for high-speed switching applications with low gate charge characteristics.

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Load switch implementations
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TAG' corresponds to the required tape-and-reel packaging configuration as defined in the official datasheet. Confirm that the Pb-free designation aligns with environmental compliance requirements for the target assembly process. Ensure the date code meets project timelines. Cross-reference the manufacturer's latest revision history to validate parameter stability before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET is required with a balance of low on-resistance and compact packaging. The 13 mΩ Rds(on) supports efficient power handling for currents up to 8.2 A. The UDFN-6 package is suitable for space-constrained designs. Evaluate thermal management needs based on the 1.49 W power dissipation rating and ensure the application operates within the specified -55°C to +150°C junction temperature range.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's Cool Trench MOSFET family, which emphasizes low on-resistance and fast switching capabilities. The UDFN-6 package is part of a series of small-outline transistor packages designed for high-density surface-mount technology. This specific model targets low-voltage power switching applications where size and efficiency are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 30 V Vds, N-channel configuration, and UDFN-6 pinout. Verify equivalent Rds(on) and Qg values to ensure similar thermal and switching performance. Check for identical package dimensions and lead material specifications to guarantee mechanical compatibility during reflow soldering processes.