NTMFS4C022NT3G

Single FETs, MOSFETs Overview

The NTMFS4C022NT3G is a single N-channel enhancement mode power MOSFET manufactured by onsemi using silicon technology. It features a SO-8FL-4 surface-mount package with dimensions of approximately 5x6 mm. Key electrical parameters include a drain-source voltage (Vds) of 30 V, a continuous drain current (Id) of 136 A at case temperature, and a maximum on-resistance (Rds(on)) of 1.7 mΩ at Vgs=10V. The device operates within a junction temperature range of -55°C to +150°C, with a power dissipation rating of 3.1 W at ambient temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench 3 technology for low on-resistance and fast switching performance.
• Designed for high current density applications in compact surface-mount footprints.
• Enhanced gate charge characteristics facilitate efficient drive requirements.

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Load switch circuits
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T3G' against official datasheets to confirm packaging type, as it differs from the 'T1G' variant. Ensure compatibility with SO-8FL-4 footprint requirements. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current capability is required in a small form factor. Compare Rds(on) and thermal resistance values against alternative packages like DFN or standard SO-8. Validate gate threshold voltage compatibility with the intended control logic levels for reliable switching operation.

Single FETs, MOSFETs Part Context

This part belongs to the NTMFS4C series of trench MOSFETs from onsemi. It shares the same die specifications as the NTMFS4C022NT1G but utilizes different tape-and-reel packaging configurations. The series is engineered for general-purpose power switching applications requiring low conduction losses.

Single FETs, MOSFETs Replacement Considerations

The NTMFS4C022NT1G is a direct functional equivalent with identical electrical characteristics. Verify that the packaging difference does not impact assembly processes. Other parts in the NTMFS4C022N family may offer different package options such as DFN.