NTTFS4C02NTAG

Single FETs, MOSFETs Overview

The NTTFS4C02NTAG is a single N-channel power MOSFET manufactured by onsemi, utilizing Trench FET technology. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 170 A at case temperature. The device exhibits a typical on-resistance (Rds(on)) of 2.25 mΩ at Vgs = 10 V. It is housed in an 8-WDFN (3.3x3.3 mm) package with an exposed pad for thermal management. The component supports a junction temperature range from -55°C to 175°C and is qualified under the AEC-Q101 standard for automotive applications.

Single FETs, MOSFETs Feature Summary

• High current handling capability with 170 A continuous drain current rating
• Low conduction losses achieved through 2.25 mΩ on-resistance
• Automotive-grade reliability certified to AEC-Q101 standards
• Compact surface-mount WDFN-8 package optimized for thermal dissipation

Single FETs, MOSFETs Applications

• Electric vehicle battery management systems
• Industrial motor drive inverters
• DC-DC converter output stages
• Solar power inverter switches

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'AG' corresponds to the AEC-Q101 automotive qualification and lead-free composition as defined in the official datasheet. Confirm that the 8-WDFN package dimensions match the design footprint requirements. Ensure the ordering information aligns with the manufacturer's current production status and availability constraints.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and low heat generation are critical in compact designs. The low Rds(on) minimizes power loss during conduction. The AEC-Q101 certification makes it suitable for harsh automotive environments. Consider the thermal resistance of the WDFN package for adequate heatsinking or PCB copper area planning to maintain junction temperatures within safe limits.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's portfolio of trench gate power MOSFETs designed for high-efficiency switching. It complements other devices in the same voltage class by offering superior current density in a small footprint. The family targets applications requiring robust performance in power conversion and motor control circuits where space and thermal constraints are significant factors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the NTMFS4C022NT1G and NVTFS4C02NTAG, which share similar electrical characteristics and package types. Verify pinout compatibility and thermal performance metrics before substitution. Ensure any replacement meets the same AEC-Q101 automotive qualification if required for the application.